Welcome to the Silicon Carbide Technical Center
Designed for power electronics engineers of all experience levels, these pages feature reference information about silicon carbide properties and their benefits in semiconductor applications, common silicon carbide devices, and advantages of silicon carbide devices over silicon-based devices. Additionally, evaluation kit reference designs for our high-end silicon carbide products are available here to accelerate future design cycles. These resources serve as a complement to our silicon carbide products.
Silicon Carbide General Information Center
Silicon Carbide Application Support
- Gate Drive Evaluation Platform
- Explore the dynamic performance of silicon carbide gate drive components in a controlled, continuous switching testing environment.
Silicon Carbide News
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Accelerate the Design Cycles of SiC-based Power Converters using Littelfuse Gate Drive Evaluation Platform
1/14/20
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Littelfuse Breaks Ground on New Power Semiconductor Assembly Facility
6/25/19
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PCIM Europe 2019: New 1.000 V Ultra Junction X-Class HiPerFET™ MOSFETs from Littelfuse
5/7/19
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Littelfuse Introduces 650V SiC Schottky Diodes with New Package Sizes, Current Ratings from 6A to 40A at APEC 2019
3/19/19
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Littelfuse Exhibits Power Semiconductor Products at Applied Power Electronics Conference & Exposition
3/18/19
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GEN2 650V SiC Schottky Diodes Offer Improved Efficiency, Reliability and Thermal Management
2/11/19
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Silicon Carbide's Meteoric Rise
1/7/19
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PODCAST: Sujit Banerjee: Lab to Fab to Energy Efficient Silicon Carbide Semis
11/8/18
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Littelfuse Completes Acquisition of Monolith Semiconductor
11/1/18
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Littelfuse Announces 1700V, 1 Ohm SiC MOSFET
9/24/18
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Interview: Littelfuse Discusses Acquisition of IXYS, Future of SiC and Non-SiC Components
7/6/18
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Littelfuse On Their Aggressive Move into SiC Power Modules at PCIM 2018
6/8/18
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SiC Schottky Diodes Shrink Energy Costs and Space Requirements
6/5/18
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Littelfuse to Exhibit Growing Power Semiconductor Portfolio at PCIM Europe 2018
5/22/18
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PSDcast: The Perks of SiC MOSFETs
5/8/18
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Littelfuse Introduces 1200V SiC MOSFETs with Ultra-Low On-Resistances at APEC 2018
3/6/18
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Littelfuse Exhibits Expanding Power Semiconductor Portfolio at APEC 2018
3/1/18
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Littelfuse Completes Acquisition of IXYS Corporation
1/17/18
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Expanded SiC Schottky Diode Line from Littelfuse Reduces Switching Losses, Increases Efficiency and Robustness
1/15/18
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First Littelfuse SiC MOSFET Provides Ultra-Fast Switching in Power Electronics
10/2/17
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Littelfuse “Future of Power Semiconductor. Today.” Introduced at PCIM Europe 2017
5/30/17
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1200V SiC Schottky Diodes from Littelfuse Are First Products from New Platform, Offer Lower Switching Losses, Higher Efficiency
5/16/17
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Littelfuse to Deliver “TechTalks LIVE!” Series at PCIM Europe 2017
5/12/17
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Littelfuse Introduces Silicon Carbide Schottky Diodes at PCIM Europe 2017, with Emphasis on Speed, Flexibility, Agility
5/11/17
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Littelfuse and Monolith Semiconductor Wrap Up Successful Presence at APEC 2017, Prepare for PCIM Europe 2017
3/30/17
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Littelfuse and Monolith Semiconductor to Demonstrate New SiC Power Semiconductor Technologies at APEC 2017
3/23/17
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Ultra-Low Forward Voltage Drop Schottky Barrier Rectifier from Littelfuse Outperforms Conventional Switching Diodes
5/10/16
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Littelfuse to Feature ‘Protect. Control. Sense’ Market Application Solutions at PCIM Europe 2016
5/4/16
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Littelfuse Invests In Silicon Carbide Technology
12/17/15
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Leveraging the Performance of Silicon Carbide
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