Fast Recovery Epitaxial Diodes (FREDs)

Fast Recovery Capsule Type

  • Electrical Characteristics
    • Catalog # M0588LC400
    • VRRM [Diode] (V) 4000
    • IFAV @ Tk=55 ℃ (A) 588
    • IFSM 10ms Half Sine Wave (A) 3955
    • I2t [Diode] (A2s) 78.2 x 103
    • trr,typ (µs) 3.50
    • Qrr (µC) 450
    • TJ Max (°C) 150
    • Package Type W4
    • V0 (V) 2.320
    • rS (mOhm) 1.770
    • RthJK 180° Sine Wave (K/W) 0.0330
    • Part Datasheet
    • Catalog # M0588LC450
    • VRRM [Diode] (V) 4500
    • IFAV @ Tk=55 ℃ (A) 588
    • IFSM 10ms Half Sine Wave (A) 3955
    • I2t [Diode] (A2s) 78.2 x 103
    • trr,typ (µs) 3.50
    • Qrr (µC) 450
    • TJ Max (°C) 150
    • Package Type W4
    • V0 (V) 2.320
    • rS (mOhm) 1.770
    • RthJK 180° Sine Wave (K/W) 0.0330
    • Part Datasheet
    • Catalog # M0790YC200
    • VRRM [Diode] (V) 2000
    • IFAV @ Tk=55 ℃ (A) 790
    • IFSM 10ms Half Sine Wave (A) 9000
    • I2t [Diode] (A2s) 405 x 103
    • trr,typ (µs) 4.00
    • Qrr (µC) 425
    • TJ Max (°C) 150
    • Package Type W2
    • V0 (V) 1.272
    • rS (mOhm) 0.584
    • RthJK 180° Sine Wave (K/W) 0.0500
    • Part Datasheet
    • Catalog # M0790YC250
    • VRRM [Diode] (V) 2500
    • IFAV @ Tk=55 ℃ (A) 790
    • IFSM 10ms Half Sine Wave (A) 9000
    • I2t [Diode] (A2s) 405 x 103
    • trr,typ (µs) 4.00
    • Qrr (µC) 425
    • TJ Max (°C) 150
    • Package Type W2
    • V0 (V) 1.272
    • rS (mOhm) 0.584
    • RthJK 180° Sine Wave (K/W) 0.0500
    • Part Datasheet
    • Catalog # M0790YH200
    • VRRM [Diode] (V) 2000
    • IFAV @ Tk=55 ℃ (A) 790
    • IFSM 10ms Half Sine Wave (A) 9000
    • I2t [Diode] (A2s) 405 x 103
    • trr,typ (µs) 4.00
    • Qrr (µC) 425
    • TJ Max (°C) 150
    • Package Type W3
    • V0 (V) 1.272
    • rS (mOhm) 0.584
    • RthJK 180° Sine Wave (K/W) 0.0500
    • Part Datasheet
    • Catalog # M0790YH250
    • VRRM [Diode] (V) 2500
    • IFAV @ Tk=55 ℃ (A) 790
    • IFSM 10ms Half Sine Wave (A) 9000
    • I2t [Diode] (A2s) 405 x 103
    • trr,typ (µs) 4.00
    • Qrr (µC) 425
    • TJ Max (°C) 150
    • Package Type W3
    • V0 (V) 1.272
    • rS (mOhm) 0.584
    • RthJK 180° Sine Wave (K/W) 0.0500
    • Part Datasheet
    • Catalog # M0914LC200
    • VRRM [Diode] (V) 2000
    • IFAV @ Tk=55 ℃ (A) 914
    • IFSM 10ms Half Sine Wave (A) 8500
    • I2t [Diode] (A2s) 361 x 103
    • trr,typ (µs) 3.20
    • Qrr (µC) 300
    • TJ Max (°C) 150
    • Package Type W4
    • V0 (V) 1.768
    • rS (mOhm) 0.653
    • RthJK 180° Sine Wave (K/W) 0.0320
    • Part Datasheet
    • Catalog # M0914LC250
    • VRRM [Diode] (V) 2500
    • IFAV @ Tk=55 ℃ (A) 914
    • IFSM 10ms Half Sine Wave (A) 8500
    • I2t [Diode] (A2s) 361 x 103
    • trr,typ (µs) 3.20
    • Qrr (µC) 300
    • TJ Max (°C) 150
    • Package Type W4
    • V0 (V) 1.768
    • rS (mOhm) 0.653
    • RthJK 180° Sine Wave (K/W) 0.0320
    • Part Datasheet
    • Catalog # M1010NC400
    • VRRM [Diode] (V) 4000
    • IFAV @ Tk=55 ℃ (A) 1010
    • IFSM 10ms Half Sine Wave (A) 9600
    • I2t [Diode] (A2s) 461 x 103
    • trr,typ (µs) 3.20
    • Qrr (µC) 1450
    • TJ Max (°C) 150
    • Package Type W5
    • V0 (V) 1.700
    • rS (mOhm) 1.030
    • RthJK 180° Sine Wave (K/W) 0.0220
    • Part Datasheet
    • Catalog # M1010NC450
    • VRRM [Diode] (V) 4500
    • IFAV @ Tk=55 ℃ (A) 1010
    • IFSM 10ms Half Sine Wave (A) 9600
    • I2t [Diode] (A2s) 461 x 103
    • trr,typ (µs) 3.20
    • Qrr (µC) 1450
    • TJ Max (°C) 150
    • Package Type W5
    • V0 (V) 1.700
    • rS (mOhm) 1.030
    • RthJK 180° Sine Wave (K/W) 0.0220
    • Part Datasheet
    • Catalog # M1010ND400
    • VRRM [Diode] (V) 4000
    • IFAV @ Tk=55 ℃ (A) 1010
    • IFSM 10ms Half Sine Wave (A) 9600
    • I2t [Diode] (A2s) 461 x 103
    • trr,typ (µs) 3.20
    • Qrr (µC) 1450
    • TJ Max (°C) 150
    • Package Type W37
    • V0 (V) 1.700
    • rS (mOhm) 1.030
    • RthJK 180° Sine Wave (K/W) 0.0220
    • Catalog # M1010ND450
    • VRRM [Diode] (V) 4500
    • IFAV @ Tk=55 ℃ (A) 1010
    • IFSM 10ms Half Sine Wave (A) 9600
    • I2t [Diode] (A2s) 461 x 103
    • trr,typ (µs) 3.20
    • Qrr (µC) 1450
    • TJ Max (°C) 150
    • Package Type W37
    • V0 (V) 1.700
    • rS (mOhm) 1.030
    • RthJK 180° Sine Wave (K/W) 0.0220
    • Catalog # M1163NC400
    • VRRM [Diode] (V) 4000
    • IFAV @ Tk=55 ℃ (A) 1163
    • IFSM 10ms Half Sine Wave (A) 10800
    • I2t [Diode] (A2s) 583 x 103
    • trr,typ (µs) 6.40
    • Qrr (µC) 1200
    • TJ Max (°C) 150
    • Package Type W5
    • V0 (V) 1.500
    • rS (mOhm) 0.770
    • RthJK 180° Sine Wave (K/W) 0.0220
    • Part Datasheet
    • Catalog # M1163NC450
    • VRRM [Diode] (V) 4500
    • IFAV @ Tk=55 ℃ (A) 1163
    • IFSM 10ms Half Sine Wave (A) 10800
    • I2t [Diode] (A2s) 583 x 103
    • trr,typ (µs) 6.40
    • Qrr (µC) 1200
    • TJ Max (°C) 150
    • Package Type W5
    • V0 (V) 1.500
    • rS (mOhm) 0.770
    • RthJK 180° Sine Wave (K/W) 0.0220
    • Part Datasheet
    • Catalog # M1163ND400
    • VRRM [Diode] (V) 4000
    • IFAV @ Tk=55 ℃ (A) 1163
    • IFSM 10ms Half Sine Wave (A) 10800
    • I2t [Diode] (A2s) 583 x 103
    • trr,typ (µs) 6.40
    • Qrr (µC) 1200
    • TJ Max (°C) 150
    • Package Type W37
    • V0 (V) 1.500
    • rS (mOhm) 0.770
    • RthJK 180° Sine Wave (K/W) 0.0220
    • Catalog # M1163ND450
    • VRRM [Diode] (V) 4500
    • IFAV @ Tk=55 ℃ (A) 1163
    • IFSM 10ms Half Sine Wave (A) 10800
    • I2t [Diode] (A2s) 583 x 103
    • trr,typ (µs) 6.40
    • Qrr (µC) 1200
    • TJ Max (°C) 150
    • Package Type W37
    • V0 (V) 1.500
    • rS (mOhm) 0.770
    • RthJK 180° Sine Wave (K/W) 0.0220
    • Catalog # M1502NC200
    • VRRM [Diode] (V) 2000
    • IFAV @ Tk=55 ℃ (A) 1502
    • IFSM 10ms Half Sine Wave (A) 17000
    • I2t [Diode] (A2s) 1.45 x 106
    • trr,typ (µs) 3.50
    • Qrr (µC) 350
    • TJ Max (°C) 150
    • Package Type W5
    • V0 (V) 1.240
    • rS (mOhm) 0.440
    • RthJK 180° Sine Wave (K/W) 0.0220
    • Part Datasheet
    • Catalog # M1502NC250
    • VRRM [Diode] (V) 2500
    • IFAV @ Tk=55 ℃ (A) 1502
    • IFSM 10ms Half Sine Wave (A) 17000
    • I2t [Diode] (A2s) 1.45 x 106
    • trr,typ (µs) 3.50
    • Qrr (µC) 350
    • TJ Max (°C) 150
    • Package Type W5
    • V0 (V) 1.240
    • rS (mOhm) 0.440
    • RthJK 180° Sine Wave (K/W) 0.0220
    • Part Datasheet
    • Catalog # M1502ND200
    • VRRM [Diode] (V) 2000
    • IFAV @ Tk=55 ℃ (A) 1502
    • IFSM 10ms Half Sine Wave (A) 17000
    • I2t [Diode] (A2s) 1.45 x 106
    • trr,typ (µs) 3.50
    • Qrr (µC) 350
    • TJ Max (°C) 150
    • Package Type W37
    • V0 (V) 1.240
    • rS (mOhm) 0.440
    • RthJK 180° Sine Wave (K/W) 0.0220
    • Part Datasheet
    • Catalog # M1502ND250
    • VRRM [Diode] (V) 2500
    • IFAV @ Tk=55 ℃ (A) 1502
    • IFSM 10ms Half Sine Wave (A) 17000
    • I2t [Diode] (A2s) 1.45 x 106
    • trr,typ (µs) 3.50
    • Qrr (µC) 350
    • TJ Max (°C) 150
    • Package Type W37
    • V0 (V) 1.240
    • rS (mOhm) 0.440
    • RthJK 180° Sine Wave (K/W) 0.0220
    • Part Datasheet
    • Catalog # M1583VC400
    • VRRM [Diode] (V) 4000
    • IFAV @ Tk=55 ℃ (A) 1583
    • IFSM 10ms Half Sine Wave (A) 24800
    • I2t [Diode] (A2s) 3.08 x 106
    • trr,typ (µs) 5.00
    • Qrr (µC) 2000
    • TJ Max (°C) 150
    • Package Type W6
    • V0 (V) 1.693
    • rS (mOhm) 0.525
    • RthJK 180° Sine Wave (K/W) 0.0160
    • Part Datasheet
    • Catalog # M1583VC450
    • VRRM [Diode] (V) 4500
    • IFAV @ Tk=55 ℃ (A) 1583
    • IFSM 10ms Half Sine Wave (A) 24800
    • I2t [Diode] (A2s) 3.08 x 106
    • trr,typ (µs) 5.00
    • Qrr (µC) 2000
    • TJ Max (°C) 150
    • Package Type W6
    • V0 (V) 1.693
    • rS (mOhm) 0.525
    • RthJK 180° Sine Wave (K/W) 0.0160
    • Part Datasheet
    • Catalog # M1583VF400
    • VRRM [Diode] (V) 4000
    • IFAV @ Tk=55 ℃ (A) 1583
    • IFSM 10ms Half Sine Wave (A) 24800
    • I2t [Diode] (A2s) 3.08 x 106
    • trr,typ (µs) 5.00
    • Qrr (µC) 2000
    • TJ Max (°C) 150
    • Package Type W43
    • V0 (V) 1.693
    • rS (mOhm) 0.525
    • RthJK 180° Sine Wave (K/W) 0.0160
    • Part Datasheet
    • Catalog # M1583VF450
    • VRRM [Diode] (V) 4500
    • IFAV @ Tk=55 ℃ (A) 1583
    • IFSM 10ms Half Sine Wave (A) 24800
    • I2t [Diode] (A2s) 3.08 x 106
    • trr,typ (µs) 5.00
    • Qrr (µC) 2000
    • TJ Max (°C) 150
    • Package Type W43
    • V0 (V) 1.693
    • rS (mOhm) 0.525
    • RthJK 180° Sine Wave (K/W) 0.0160
    • Part Datasheet
    • Catalog # M1609NC200
    • VRRM [Diode] (V) 2000
    • IFAV @ Tk=55 ℃ (A) 1609
    • IFSM 10ms Half Sine Wave (A) 17500
    • I2t [Diode] (A2s) 1.53 x 106
    • trr,typ (µs) 3.20
    • Qrr (µC) 800
    • TJ Max (°C) 150
    • Package Type W5
    • V0 (V) 1.310
    • rS (mOhm) 0.345
    • RthJK 180° Sine Wave (K/W) 0.0220
    • Part Datasheet
    • Catalog # M1609NC260
    • VRRM [Diode] (V) 2600
    • IFAV @ Tk=55 ℃ (A) 1609
    • IFSM 10ms Half Sine Wave (A) 17500
    • I2t [Diode] (A2s) 1.53 x 106
    • trr,typ (µs) 3.20
    • Qrr (µC) 800
    • TJ Max (°C) 150
    • Package Type W5
    • V0 (V) 1.310
    • rS (mOhm) 0.345
    • RthJK 180° Sine Wave (K/W) 0.0220
    • Part Datasheet
    • Catalog # M1609ND200
    • VRRM [Diode] (V) 2000
    • IFAV @ Tk=55 ℃ (A) 1609
    • IFSM 10ms Half Sine Wave (A) 17500
    • I2t [Diode] (A2s) 1.53 x 106
    • trr,typ (µs) 3.20
    • Qrr (µC) 800
    • TJ Max (°C) 150
    • Package Type W37
    • V0 (V) 1.310
    • rS (mOhm) 0.345
    • RthJK 180° Sine Wave (K/W) 0.0220
    • Catalog # M1609ND260
    • VRRM [Diode] (V) 2600
    • IFAV @ Tk=55 ℃ (A) 1609
    • IFSM 10ms Half Sine Wave (A) 17500
    • I2t [Diode] (A2s) 1.53 x 106
    • trr,typ (µs) 3.20
    • Qrr (µC) 800
    • TJ Max (°C) 150
    • Package Type W37
    • V0 (V) 1.310
    • rS (mOhm) 0.345
    • RthJK 180° Sine Wave (K/W) 0.0220
    • Catalog # M2273VC300
    • VRRM [Diode] (V) 3000
    • IFAV @ Tk=55 ℃ (A) 2273
    • IFSM 10ms Half Sine Wave (A) 28000
    • I2t [Diode] (A2s) 3.92 x 106
    • trr,typ (µs) 8.50
    • Qrr (µC) 2500
    • TJ Max (°C) 150
    • Package Type W6
    • V0 (V) 1.239
    • rS (mOhm) 0.244
    • RthJK 180° Sine Wave (K/W) 0.0160
    • Part Datasheet
    • Catalog # M2273VC360
    • VRRM [Diode] (V) 3600
    • IFAV @ Tk=55 ℃ (A) 2273
    • IFSM 10ms Half Sine Wave (A) 28000
    • I2t [Diode] (A2s) 3.92 x 106
    • trr,typ (µs) 8.50
    • Qrr (µC) 2500
    • TJ Max (°C) 150
    • Package Type W6
    • V0 (V) 1.239
    • rS (mOhm) 0.244
    • RthJK 180° Sine Wave (K/W) 0.0160
    • Part Datasheet
    • Catalog # M2273VF300
    • VRRM [Diode] (V) 3000
    • IFAV @ Tk=55 ℃ (A) 2273
    • IFSM 10ms Half Sine Wave (A) 28000
    • I2t [Diode] (A2s) 3.92 x 106
    • trr,typ (µs) 8.50
    • Qrr (µC) 2500
    • TJ Max (°C) 150
    • Package Type W43
    • V0 (V) 1.239
    • rS (mOhm) 0.244
    • RthJK 180° Sine Wave (K/W) 0.0160
    • Part Datasheet
    • Catalog # M2273VF360
    • VRRM [Diode] (V) 3600
    • IFAV @ Tk=55 ℃ (A) 2273
    • IFSM 10ms Half Sine Wave (A) 28000
    • I2t [Diode] (A2s) 3.92 x 106
    • trr,typ (µs) 8.50
    • Qrr (µC) 2500
    • TJ Max (°C) 150
    • Package Type W43
    • V0 (V) 1.239
    • rS (mOhm) 0.244
    • RthJK 180° Sine Wave (K/W) 0.0160
    • Part Datasheet
    • Catalog # M2325HA400
    • VRRM [Diode] (V) 4000
    • IFAV @ Tk=55 ℃ (A) 2325
    • IFSM 10ms Half Sine Wave (A) 28000
    • I2t [Diode] (A2s) 3.92 x 106
    • trr,typ (µs) 5.4
    • Qrr (µC) 2400
    • TJ Max (°C) 150
    • Package Type W121
    • V0 (V) 1.581
    • rS (mOhm) 0.402
    • RthJK 180° Sine Wave (K/W) 0.0105
    • Part Datasheet
    • Catalog # M2325HA450
    • VRRM [Diode] (V) 4500
    • IFAV @ Tk=55 ℃ (A) 2325
    • IFSM 10ms Half Sine Wave (A) 28000
    • I2t [Diode] (A2s) 3.92 x 106
    • trr,typ (µs) 5.4
    • Qrr (µC) 2400
    • TJ Max (°C) 150
    • Package Type W121
    • V0 (V) 1.581
    • rS (mOhm) 0.402
    • RthJK 180° Sine Wave (K/W) 0.0105
    • Part Datasheet
    • Catalog # M2408NC020
    • VRRM [Diode] (V) 200
    • IFAV @ Tk=55 ℃ (A) 2408
    • IFSM 10ms Half Sine Wave (A) 24000
    • I2t [Diode] (A2s) 2.88 x 106
    • trr,typ (µs) 1.90
    • Qrr (µC) 250
    • TJ Max (°C) 150
    • Package Type W5
    • V0 (V) 1.065
    • rS (mOhm) 0.122
    • RthJK 180° Sine Wave (K/W) 0.0220
    • Part Datasheet
    • Catalog # M2408NC060
    • VRRM [Diode] (V) 600
    • IFAV @ Tk=55 ℃ (A) 2408
    • IFSM 10ms Half Sine Wave (A) 24000
    • I2t [Diode] (A2s) 2.88 x 106
    • trr,typ (µs) 1.90
    • Qrr (µC) 250
    • TJ Max (°C) 150
    • Package Type W5
    • V0 (V) 1.065
    • rS (mOhm) 0.122
    • RthJK 180° Sine Wave (K/W) 0.0220
    • Part Datasheet
    • Catalog # M2408ND020
    • VRRM [Diode] (V) 200
    • IFAV @ Tk=55 ℃ (A) 2408
    • IFSM 10ms Half Sine Wave (A) 24000
    • I2t [Diode] (A2s) 2.88 x 106
    • trr,typ (µs) 1.90
    • Qrr (µC) 250
    • TJ Max (°C) 150
    • Package Type W37
    • V0 (V) 1.065
    • rS (mOhm) 0.122
    • RthJK 180° Sine Wave (K/W) 0.0220
    • Part Datasheet
    • Catalog # M2408ND060
    • VRRM [Diode] (V) 600
    • IFAV @ Tk=55 ℃ (A) 2408
    • IFSM 10ms Half Sine Wave (A) 24000
    • I2t [Diode] (A2s) 2.88 x 106
    • trr,typ (µs) 1.90
    • Qrr (µC) 250
    • TJ Max (°C) 150
    • Package Type W37
    • V0 (V) 1.065
    • rS (mOhm) 0.122
    • RthJK 180° Sine Wave (K/W) 0.0220
    • Part Datasheet
    • Catalog # M2505MC200
    • VRRM [Diode] (V) 2000
    • IFAV @ Tk=55 ℃ (A) 2505
    • IFSM 10ms Half Sine Wave (A) 27000
    • I2t [Diode] (A2s) 3.65 x 106
    • trr,typ (µs) 7.60
    • Qrr (µC) 1950
    • TJ Max (°C) 125
    • Package Type W54
    • V0 (V) 0.991
    • rS (mOhm) 0.162
    • RthJK 180° Sine Wave (K/W) 0.0140
    • Part Datasheet
    • Catalog # M2505MC220
    • VRRM [Diode] (V) 2200
    • IFAV @ Tk=55 ℃ (A) 2505
    • IFSM 10ms Half Sine Wave (A) 27000
    • I2t [Diode] (A2s) 3.65 x 106
    • trr,typ (µs) 7.60
    • Qrr (µC) 1950
    • TJ Max (°C) 125
    • Package Type W54
    • V0 (V) 0.991
    • rS (mOhm) 0.162
    • RthJK 180° Sine Wave (K/W) 0.0140
    • Part Datasheet
    • Catalog # M2639ZC360
    • VRRM [Diode] (V) 3600
    • IFAV @ Tk=55 ℃ (A) 2639
    • IFSM 10ms Half Sine Wave (A) 27520
    • I2t [Diode] (A2s) 3.79 x 106
    • trr,typ (µs) 8.50
    • Qrr (µC) 2300
    • TJ Max (°C) 150
    • Package Type W7
    • V0 (V) 1.380
    • rS (mOhm) 0.290
    • RthJK 180° Sine Wave (K/W) 0.0110
    • Part Datasheet
    • Catalog # M2639ZC420
    • VRRM [Diode] (V) 4200
    • IFAV @ Tk=55 ℃ (A) 2639
    • IFSM 10ms Half Sine Wave (A) 27520
    • I2t [Diode] (A2s) 3.79 x 106
    • trr,typ (µs) 8.50
    • Qrr (µC) 2300
    • TJ Max (°C) 150
    • Package Type W7
    • V0 (V) 1.380
    • rS (mOhm) 0.290
    • RthJK 180° Sine Wave (K/W) 0.0110
    • Part Datasheet
    • Catalog # M2639ZD360
    • VRRM [Diode] (V) 3600
    • IFAV @ Tk=55 ℃ (A) 2639
    • IFSM 10ms Half Sine Wave (A) 27520
    • I2t [Diode] (A2s) 3.79 x 106
    • trr,typ (µs) 8.50
    • Qrr (µC) 2300
    • TJ Max (°C) 150
    • Package Type W42
    • V0 (V) 1.380
    • rS (mOhm) 0.290
    • RthJK 180° Sine Wave (K/W) 0.0110
    • Part Datasheet
    • Catalog # M2639ZD420
    • VRRM [Diode] (V) 4200
    • IFAV @ Tk=55 ℃ (A) 2639
    • IFSM 10ms Half Sine Wave (A) 27520
    • I2t [Diode] (A2s) 3.79 x 106
    • trr,typ (µs) 8.50
    • Qrr (µC) 2300
    • TJ Max (°C) 150
    • Package Type W42
    • V0 (V) 1.380
    • rS (mOhm) 0.290
    • RthJK 180° Sine Wave (K/W) 0.0110
    • Part Datasheet
    • Catalog # M2698ZC250
    • VRRM [Diode] (V) 2500
    • IFAV @ Tk=55 ℃ (A) 2698
    • IFSM 10ms Half Sine Wave (A) 27800
    • I2t [Diode] (A2s) 3.86 x 106
    • trr,typ (µs) 6.20
    • Qrr (µC) 1200
    • TJ Max (°C) 150
    • Package Type W7
    • V0 (V) 1.000
    • rS (mOhm) 0.330
    • RthJK 180° Sine Wave (K/W) 0.0110
    • Part Datasheet
    • Catalog # M2698ZC280
    • VRRM [Diode] (V) 2800
    • IFAV @ Tk=55 ℃ (A) 2698
    • IFSM 10ms Half Sine Wave (A) 27800
    • I2t [Diode] (A2s) 3.86 x 106
    • trr,typ (µs) 6.20
    • Qrr (µC) 1200
    • TJ Max (°C) 150
    • Package Type W7
    • V0 (V) 1.000
    • rS (mOhm) 0.330
    • RthJK 180° Sine Wave (K/W) 0.0110
    • Part Datasheet
    • Catalog # M2698ZC350
    • VRRM [Diode] (V) 3500
    • IFAV @ Tk=55 ℃ (A) 2698
    • IFSM 10ms Half Sine Wave (A) 27800
    • I2t [Diode] (A2s) 3.86 x 106
    • trr,typ (µs) 6.20
    • Qrr (µC) 1200
    • TJ Max (°C) 150
    • Package Type W7
    • V0 (V) 1.000
    • rS (mOhm) 0.330
    • RthJK 180° Sine Wave (K/W) 0.0110
    • Part Datasheet
    • Catalog # M2698ZD250
    • VRRM [Diode] (V) 2500
    • IFAV @ Tk=55 ℃ (A) 2698
    • IFSM 10ms Half Sine Wave (A) 27800
    • I2t [Diode] (A2s) 3.86 x 106
    • trr,typ (µs) 6.20
    • Qrr (µC) 1200
    • TJ Max (°C) 150
    • Package Type W42
    • V0 (V) 1.000
    • rS (mOhm) 0.330
    • RthJK 180° Sine Wave (K/W) 0.0110
    • Part Datasheet
    • Catalog # M2698ZD280
    • VRRM [Diode] (V) 2800
    • IFAV @ Tk=55 ℃ (A) 2698
    • IFSM 10ms Half Sine Wave (A) 27800
    • I2t [Diode] (A2s) 3.86 x 106
    • trr,typ (µs) 6.20
    • Qrr (µC) 1200
    • TJ Max (°C) 150
    • Package Type W42
    • V0 (V) 1.000
    • rS (mOhm) 0.330
    • RthJK 180° Sine Wave (K/W) 0.0110
    • Part Datasheet
    • Catalog # M2698ZD350
    • VRRM [Diode] (V) 3500
    • IFAV @ Tk=55 ℃ (A) 2698
    • IFSM 10ms Half Sine Wave (A) 27800
    • I2t [Diode] (A2s) 3.86 x 106
    • trr,typ (µs) 6.20
    • Qrr (µC) 1200
    • TJ Max (°C) 150
    • Package Type W42
    • V0 (V) 1.000
    • rS (mOhm) 0.330
    • RthJK 180° Sine Wave (K/W) 0.0110
    • Part Datasheet
    • Catalog # M2837VC180
    • VRRM [Diode] (V) 1800
    • IFAV @ Tk=55 ℃ (A) 2837
    • IFSM 10ms Half Sine Wave (A) 31800
    • I2t [Diode] (A2s) 5.10 x 106
    • trr,typ (µs) 7.00
    • Qrr (µC) 2100
    • TJ Max (°C) 150
    • Package Type W6
    • V0 (V) 0.900
    • rS (mOhm) 0.170
    • RthJK 180° Sine Wave (K/W) 0.0160
    • Part Datasheet
    • Catalog # M2837VC250
    • VRRM [Diode] (V) 2500
    • IFAV @ Tk=55 ℃ (A) 2837
    • IFSM 10ms Half Sine Wave (A) 31800
    • I2t [Diode] (A2s) 5.10 x 106
    • trr,typ (µs) 7.00
    • Qrr (µC) 2100
    • TJ Max (°C) 150
    • Package Type W6
    • V0 (V) 0.900
    • rS (mOhm) 0.170
    • RthJK 180° Sine Wave (K/W) 0.0160
    • Part Datasheet
    • Catalog # M2837VF180
    • VRRM [Diode] (V) 1800
    • IFAV @ Tk=55 ℃ (A) 2837
    • IFSM 10ms Half Sine Wave (A) 31800
    • I2t [Diode] (A2s) 5.10 x 106
    • trr,typ (µs) 7.00
    • Qrr (µC) 2100
    • TJ Max (°C) 150
    • Package Type W43
    • V0 (V) 0.900
    • rS (mOhm) 0.170
    • RthJK 180° Sine Wave (K/W) 0.0160
    • Part Datasheet
    • Catalog # M2837VF250
    • VRRM [Diode] (V) 2500
    • IFAV @ Tk=55 ℃ (A) 2837
    • IFSM 10ms Half Sine Wave (A) 31800
    • I2t [Diode] (A2s) 5.10 x 106
    • trr,typ (µs) 7.00
    • Qrr (µC) 2100
    • TJ Max (°C) 150
    • Package Type W43
    • V0 (V) 0.900
    • rS (mOhm) 0.170
    • RthJK 180° Sine Wave (K/W) 0.0160
    • Part Datasheet
    • Catalog # M3770ZC200
    • VRRM [Diode] (V) 2000
    • IFAV @ Tk=55 ℃ (A) 3770
    • IFSM 10ms Half Sine Wave (A) 44000
    • I2t [Diode] (A2s) 9.68 x 106
    • trr,typ (µs) 7.00
    • Qrr (µC) 2000
    • TJ Max (°C) 150
    • Package Type W7
    • V0 (V) 1.190
    • rS (mOhm) 0.118
    • RthJK 180° Sine Wave (K/W) 0.0110
    • Part Datasheet
    • Catalog # M3770ZC240
    • VRRM [Diode] (V) 2400
    • IFAV @ Tk=55 ℃ (A) 3770
    • IFSM 10ms Half Sine Wave (A) 44000
    • I2t [Diode] (A2s) 9.68 x 106
    • trr,typ (µs) 7.00
    • Qrr (µC) 2000
    • TJ Max (°C) 150
    • Package Type W7
    • V0 (V) 1.190
    • rS (mOhm) 0.118
    • RthJK 180° Sine Wave (K/W) 0.0110
    • Part Datasheet
    • Catalog # M3770ZC300
    • VRRM [Diode] (V) 3000
    • IFAV @ Tk=55 ℃ (A) 3770
    • IFSM 10ms Half Sine Wave (A) 44000
    • I2t [Diode] (A2s) 9.68 x 106
    • trr,typ (µs) 7.00
    • Qrr (µC) 2000
    • TJ Max (°C) 150
    • Package Type W7
    • V0 (V) 1.190
    • rS (mOhm) 0.118
    • RthJK 180° Sine Wave (K/W) 0.0110
    • Part Datasheet
    • Catalog # M3770ZD200
    • VRRM [Diode] (V) 2000
    • IFAV @ Tk=55 ℃ (A) 3770
    • IFSM 10ms Half Sine Wave (A) 44000
    • I2t [Diode] (A2s) 9.68 x 106
    • trr,typ (µs) 7.00
    • Qrr (µC) 2000
    • TJ Max (°C) 150
    • Package Type W7
    • V0 (V) 1.190
    • rS (mOhm) 0.118
    • RthJK 180° Sine Wave (K/W) 0.0110
    • Part Datasheet
    • Catalog # M3770ZD240
    • VRRM [Diode] (V) 2400
    • IFAV @ Tk=55 ℃ (A) 3770
    • IFSM 10ms Half Sine Wave (A) 44000
    • I2t [Diode] (A2s) 9.68 x 106
    • trr,typ (µs) 7.00
    • Qrr (µC) 2000
    • TJ Max (°C) 150
    • Package Type W42
    • V0 (V) 1.190
    • rS (mOhm) 0.118
    • RthJK 180° Sine Wave (K/W) 0.0110
    • Part Datasheet
    • Catalog # M3770ZD300
    • VRRM [Diode] (V) 3000
    • IFAV @ Tk=55 ℃ (A) 3770
    • IFSM 10ms Half Sine Wave (A) 44000
    • I2t [Diode] (A2s) 9.68 x 106
    • trr,typ (µs) 7.00
    • Qrr (µC) 2000
    • TJ Max (°C) 150
    • Package Type W42
    • V0 (V) 1.190
    • rS (mOhm) 0.118
    • RthJK 180° Sine Wave (K/W) 0.0110
    • Part Datasheet