

- Designed for high-power pulse and capacitive discharge applications
- Switched on by a voltage applied at the gate terminal (MOS structure)
- Capable of carrying current up to 32kA for a period of 1 microsecond
- High power densities
- Low gate drive requirements
- Available in proprietary packages: Product Line Introduction (1500V MOS-Gated Thyristors)
- surface mountable SMPD and Mini-SMPD
- high-voltage versions of the international standard TO-247: TO-247HV and TO-247PLUS-HV
- High surge current
- High current packages
- Low Gate Drive Requirements
MOS Gated Thyristor Parts
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Showing 1 to 4 of 4 Total Results
Part Number | Actions | VDM (V) | ITSM 1µs TC = 25°C (kA) | ITSM 10µs TC = 25°C (kA) | VT (V) | rT (mΩ) | Qg(on) (nC) | tri TC = 25°C (ns) | VGK(th) (V) | Co-pack Diode | Package Type |
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Part Number | Actions | VDM (V) | ITSM 1µs TC = 25°C (kA) | ITSM 10µs TC = 25°C (kA) | VT (V) | rT (mΩ) | Qg(on) (nC) | tri TC = 25°C (ns) | VGK(th) (V) | Co-pack Diode | Package Type | |
---|---|---|---|---|---|---|---|---|---|---|---|---|
1500 | 7.6 | 3.5 | 7.5 | 1.2 | 99 | 100 | 5 | No | TO-247HV | |||
1500 | 7.6 | 3.5 | 7.5 | 1.2 | 99 | 100 | 5 | Yes | TO-247 PLUS-HV | |||
1500 | 32 | 11.8 | 7.5 | 1.2 | 180 | 100 | 5 | Yes | SMPD | |||
1500 | 15.5 | 6.4 | 6 | 1.2 | 99 | 100 | 5 | No | SSMPD |