background-waves

Series: Q3 Class

200V - 1100V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs)
Product Status| Activei
Littelfuse Discrete MOSFETs Q3-Class Image
info

The Q3-Class series Power MOSFETs provide the end-user with a broad range of devices that demonstrate exceptional power switching performance, excellent thermal characteristics, enhanced device ruggedness, and high energy efficiency. Available with drain-to-source voltage ratings of 200V–1000V and drain current ratings of 10A–100A, the Q3-Class series features an optimized combination of low on-state resistance (Rdson) and gate charge (Qg), resulting in a substantial reduction in both the conduction and switching loss of the device.

Power switching capabilities and device ruggedness are further enhanced through the utilization of our proven HiPerFETTM process, yielding a device with a fast intrinsic rectifier which provides for low reverse recovery charge (Qrr) while enhancing the commutating dV/dt ratings (up to 50V/ns) of the device.

Advantages:

  • Easy to Mount
  • High Power Density
  • Space savings
  • Low Rdson per silicon area
  • Low Qgand Qgd
  • Excellent dV/dt performance
  • High Speed Switching
  • Fast intrinsic Rectifier
  • Low Intrinsic Gate Resistance
  • High Avalanche Energy Capabilities
  • Excellent Thermal Performance

Q3 Class Parts

FiltersFilters

200onClick
1100onClick
Submit

0.04onClick
1.2onClick
Submit

10onClick
100onClick
Submit

62onClick
300onClick
Submit

0.08onClick
0.41onClick
Submit

3150onClick
14000onClick
Submit

434onClick
434onClick
Submit

300onClick
1560onClick
Submit

Q3 Class Applications

Highlights Section

  • Power Factor Correction
  • Battery chargers
  • Switched-mode and resonant-mode power supplies
  • Server and Telecom Power Systems
  • Arc Welding
  • Plasma Cutting
  • Induction Heating
  • Solar Generation Systems
  • Motor Controls

Series: Q3-Class Resources