Gen1

IXTF200N10T

  • Electrical Characteristics
    • Catalog # IXTF200N10T
    • Drain-Source Voltage (V) 100
    • Maximum On-Resistance @ 25 ℃ (Ohm) 0.007
    • Continuous Drain Current @ 25 ℃ (A) 90
    • Gate Charge (nC) 152
    • Input Capacitance, CISS (pF) 9400
    • Thermal resistance [junction-case] (K/W) 0.96
    • Configuration Single
    • Package Type I4-PAK
    • Typical Reverse Recovery Time (ns) 76
    • Power Dissipation (W) 156
    • Sample Request No
    • Check Stock Yes
    • Partner ECAD Models IXTF200N10T