Gen1

IXTQ200N10T

  • Electrical Characteristics
    • Catalog # IXTQ200N10T
    • Drain-Source Voltage (V) 100
    • Maximum On-Resistance @ 25 ℃ (Ohm) 0.0055
    • Continuous Drain Current @ 25 ℃ (A) 200
    • Gate Charge (nC) 152
    • Input Capacitance, CISS (pF) 9400
    • Thermal resistance [junction-case] (K/W) 0.27
    • Configuration Single
    • Package Type TO-3P
    • Typical Reverse Recovery Time (ns) 76
    • Power Dissipation (W) 550
    • Sample Request Yes
    • Check Stock Yes
    • Partner ECAD Models IXTQ200N10T