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IXFJ20N85X

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IXFJ20N85X

DiscMSFT NCh UltrJnctn XClass ISO247 | Series: X Class
info

Ultra-Junction X-Class Power MOSFETs with fast body diodes are rugged devices that display the lowest on-state resistances in the industry, enabling very high power density in high-voltage power conversion applications. Developed using the charge compensation principle and proprietary process technology, these devices exhibit low gate charges and superior dv/dt performance. In addition, thanks to the fast soft-recovery body diode, these Ultra-Junction MOSFETs help reduce switching losses and electromagnetic interference (EMI).

Advantages:

  • Higher efficiency
  • High power density
  • Easy to mount
  • Space savings
PropertyValue
VDSS (V)
850
RDS(ON),max @ 25 °C (Ω)
0.36
ID, cont @ 25 °C (A)
9.5
Gate Charge (nC)
63
RthJC (K/W)
1.13
Configuration
Single
Package Type
TO-247ISO
CISS (pF)
1660
trr,typ (ns)
190
PD (W)
110
  • Ultra low on-resistance RDS(ON) and gate charge Qg
  • Fast body diode
  • dv/dt ruggedness
  • Avalanche rated
  • Low package inductance
  • International standard packages

IXFJ20N85X Applications

Highlights Section

  • Industrial switched-mode and resonant-mode power supplies
  • Electric vehicle battery chargers
  • Ac and dc Motor Drives
  • Dc-dc converters
  • Renewable-energy inverters
  • Power Factor Correction (PFC) circuits
  • Robotics and servo control

IXFJ20N85X Resources

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Part NumberPart DescriptionRoHSPb-FreeRoHS (2015/863/EU) CertificateREACH (SVHC's) DeclarationREACH (SVHC's)Halogen FreeIPC-Material Declaration
IXFJ20N85XDiscMSFT NCh UltrJnctn XClass ISO247

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