Link has been copied to clipboard
IXFJ20N85X
DiscMSFT NCh UltrJnctn XClass ISO247 | Series: X Class
Ultra-Junction X-Class Power MOSFETs with fast body diodes are rugged devices that display the lowest on-state resistances in the industry, enabling very high power density in high-voltage power conversion applications. Developed using the charge compensation principle and proprietary process technology, these devices exhibit low gate charges and superior dv/dt performance. In addition, thanks to the fast soft-recovery body diode, these Ultra-Junction MOSFETs help reduce switching losses and electromagnetic interference (EMI).
Advantages:
- Higher efficiency
- High power density
- Easy to mount
- Space savings
| Property | Value |
|---|---|
VDSS (V) | 850 |
RDS(ON),max @ 25 °C (Ω) | 0.36 |
ID, cont @ 25 °C (A) | 9.5 |
Gate Charge (nC) | 63 |
RthJC (K/W) | 1.13 |
Configuration | Single |
Package Type | TO-247ISO |
CISS (pF) | 1660 |
trr,typ (ns) | 190 |
PD (W) | 110 |
- Ultra low on-resistance RDS(ON) and gate charge Qg
- Fast body diode
- dv/dt ruggedness
- Avalanche rated
- Low package inductance
- International standard packages
IXFJ20N85X Applications
- Industrial switched-mode and resonant-mode power supplies
- Electric vehicle battery chargers
- Ac and dc Motor Drives
- Dc-dc converters
- Renewable-energy inverters
- Power Factor Correction (PFC) circuits
- Robotics and servo control
IXFJ20N85X Resources
Link has been copied to clipboardShowing 1 to 1 of 1 Total Results
Share
| Part Number | Part Description | RoHS | Pb-Free | RoHS (2015/863/EU) Certificate | REACH (SVHC's) Declaration | REACH (SVHC's) | Halogen Free | IPC-Material Declaration | |
|---|---|---|---|---|---|---|---|---|---|
| IXFJ20N85X | DiscMSFT NCh UltrJnctn XClass ISO247 | View More |
If the product environmental information that you are looking for does not appear in this tab, please complete the Product Environmental Information Request Form.
