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IXFT240N15X3HV

Product Status| Obsoletei

IXFT240N15X3HV

DiscMSFT NChUltrJnctn X3Class TO-268AA | Series: X3 Class
info

Developed using a charge compensation principle and proprietary process technology, these Ultra Junction MOSFETs provide the best-in-class Figure of Merit (on-resistance times gate charge), which translates into lowest conduction and switching losses. They exhibit the lowest on-state resistances in the industry.

With low reverse recovery charge and time, the body diodes are capable of removing all the leftover energies during high-speed switching to avoid device failure and achieve high efficiency.

Moreover, these new devices are avalanche capable and exhibit a superior dv/dt performance as well. They are robust against device failure caused by voltage spikes and accidental turn-on of parasitic bipolar transistors inherent in the MOSFET structure. As such these rugged devices require fewer snubbers and can be used in both hard and soft switching power converters.

PropertyValue
VDSS (V)
150
RDS(ON),max @ 25 °C (Ω)
0.0054
ID, cont @ 25 °C (A)
240
Gate Charge (nC)
150
RthJC (K/W)
0.16
Configuration
Single
CISS (pF)
9580
trr,typ (ns)
97
PD (W)
780
  • Lowest on-resistance RDS(ON) and gate charge Qg
  • Fast soft recovery body diode
  • dv/dt ruggedness
  • Superior avalanche capability
  • International standard packages

IXFT240N15X3HV Applications

Highlights Section

  • Battery chargers for light electric vehicles
  • Synchronous rectification in switching power supplies
  • Motor control
  • Dc-dc converters
  • Uninterruptible power supplies
  • Electric forklifts
  • Class-D audio amplifiers
  • Telecom systems

IXFT240N15X3HV Resources

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Part NumberPart DescriptionRoHSPb-FreeRoHS (2015/863/EU) CertificateREACH (SVHC's) DeclarationREACH (SVHC's)Halogen FreeIPC-Material Declaration
IXFT240N15X3HVDiscMSFT NChUltrJnctn X3Class TO-268AA

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