X4-Class

IXTA150N15X4-7

These devices are developed using a charge compensation principle and proprietary process technology, resulting in Power MOSFETs with significantly reduced resistance RDS(on) and gate charge Qg. A low on-state resistance

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  • Electrical Characteristics
    • Catalog # IXTA150N15X4-7
    • Drain-Source Voltage (V) 150
    • Maximum On-Resistance @ 25 ℃ (Ohm) 0.0069
    • Continuous Drain Current @ 25 ℃ (A) 150
    • Gate Charge (nC) 105
    • Input Capacitance, CISS (pF) 5500
    • Thermal resistance [junction-case] (K/W) 0.31
    • Configuration Single
    • Package Type TO-263-7
    • Typical Reverse Recovery Time (ns) 100
    • Power Dissipation (W) 480
    • TJ Max (°C) 150
    • Reverse Transfer Capacitance, CRSS (pF) 4
    • Sample Request No
    • Check Stock Yes
    • Partner ECAD Models IXTA150N15X4-7