HiPerFET™ and MOSFET

MMIX1F160N30T

  • Electrical Characteristics
    • Catalog # MMIX1F160N30T
    • Drain-Source Voltage (V) 300
    • Maximum On-Resistance @ 25 ℃ (Ohm) 0.02
    • Continuous Drain Current @ 25 ℃ (A) 102
    • Gate Charge (nC) 376
    • Input Capacitance, CISS (pF) 24500
    • Thermal resistance [junction-case] (K/W) 0.22
    • Configuration Single
    • Package Type SMPD
    • Power Dissipation (W) 570
    • Maximum Reverse Recovery (ns) 200
    • Sample Request No
    • Check Stock Yes
    • Partner ECAD Models MMIX1F160N30T