HiPerFET™ and MOSFET

MMIX1T660N04T4

  • Electrical Characteristics
    • Catalog # MMIX1T660N04T4
    • Drain-Source Voltage (V) 40
    • Maximum On-Resistance @ 25 ℃ (Ohm) 0.00085
    • Continuous Drain Current @ 25 ℃ (A) 660
    • Gate Charge (nC) 860
    • Input Capacitance, CISS (pF) 44000
    • Thermal resistance [junction-case] (K/W) 0.18
    • Configuration Single
    • Package Type SMPD
    • Typical Reverse Recovery Time (ns) 60
    • Power Dissipation (W) 830
    • Sample Request No
    • Check Stock No
    • Partner ECAD Models MMIX1T660N04T4