background-waves

NGB15N41ACLT4G

Product Status| Obsoletei

NGB15N41ACLT4G

15 AMP, 410V CLAMP | Series: LGB15N41ATI
info

This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Over-Voltage clamped protection for use in inductive coil drivers applications. Primary uses include Ignition, Direct Fuel Injection, or wherever high voltage and high current switching is required.

End Products:

  • Automotive
PropertyValue
TYP BVCES@IC (V)
410
ICmax (A)
15
VCE(sat) (V)
1.9
EAS (mJ)
250
PDMAX (W)
107
  • DPAK Package Offers Smaller Footprint and Increased Board Space
  • Gate-Emitter ESD Protection
  • Temperature Compensated Gate-Collector Voltage Clamp Limits Stress Applied to Load
  • Integrated ESD Diode Protection
  • New Cell Design Increases Unclamped Inductive Switching (UIS) Energy Per Area
  • Short-Circuit Withstand Capability
  • Low Threshold Voltage to Interface Power Loads to Logic or Microprocessor Devices
  • Low Saturation Voltage
  • High Pulsed Current Capability
  • Optional Gate Resistor (RG) and Gate-Emitter Resistor (RGE)

NGB15N41ACLT4G Applications

Highlights Section

  • Ignition Systems
  • Coil-on-Plug

NGB15N41ACLT4G Resources

Showing 1 to 1 of 1 Total Results
Share
Part NumberPart DescriptionRoHSPb-FreeRoHS (2015/863/EU) CertificateREACH (SVHC's) DeclarationREACH (SVHC's)Halogen FreeIPC-Material Declaration
NGB15N41ACLT4G15 AMP, 410V CLAMPRoHS8/15/2016Pb-Free9/12/2018Yes9/12/2018

If the product environmental information that you are looking for does not appear in this tab, please complete the Product Environmental Information Request Form.