

Avalanche breakdown diodes fabricated in a proprietary silicon avalanche technology protect each I/O pin to provide a high level of protection for electronic equipment that may experience destructive electrostatic discharges (ESD). These robust diodes can safely absorb repetitive ESD strikes at ±30kV (contact and air discharge, IEC 61000- 4-2) without performance degradation. Additionally, each diode can safely dissipate 80A (SC1105) of 8/20μs surge current (IEC 61000-4-5 2nd edition) with very low clamping voltages.
- ESD, IEC 61000-4-2, ±30kV contact, ±30kV air
- EFT, IEC 61000-4-4, 40A (5/50ns)
- Lightning, IEC 61000- 4-5 2nd edition, 80A (tP=8/20μs, SC1105)
- Low clamping voltage
- Low leakage current
- Moisture Sensitivity Level(MSL -1)
- Lead free and RoHS compliant
SC11xx Parts
Filters
Showing 1 to 3 of 3 Total Results
Part Number | Actions | AEC-Q101 Qualified | VR (Vstandoff) | ILeak (µA) | ESD Contact (kV) | ESD Air (kV) | Lightning Immunity (8x20µs)(A) | Clamp Voltage | CI/O TYP (pF) | Polarity | Channels | MIN VBR@IT (V) | Package |
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Part Number | Actions | AEC-Q101 Qualified | VR (Vstandoff) | ILeak (µA) | ESD Contact (kV) | ESD Air (kV) | Lightning Immunity (8x20µs)(A) | Clamp Voltage | CI/O TYP (pF) | Polarity | Channels | MIN VBR@IT (V) | Package | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
No | 5 | 1 | ±30 | ±30 | 80 | 11.8V@80A | 660 | Unidirectional | 1 | 6 | uDFN1610 | |||
No | 15 | 1 | ±30 | ±30 | 30 | 27.4V@30A | 180 | Unidirectional | 1 | 16.7 | uDFN1610 | |||
No | 22 | 0.02 | ±30 | ±30 | 27 | 35.5V@27A | 160 | Unidirectional | 1 | 23 | uDFN1610 |
SC11xx Applications
- Switches / Buttons
- Test Equipment / Instrumentation
- Point-of-Sale Terminals
- Medical Equipment
- Notebooks / Desktops / Servers
- Computer Peripherals