

Avalanche breakdown diodes fabricated in a proprietary silicon avalanche technology protect each I/O pin to provide a high level of protection for electronic equipment that may experience destructive electrostatic discharges (ESD). These robust diodes can safely absorb repetitive ESD strikes at ±30kV (contact and air discharge, IEC 61000-4-2) without performance degradation. Additionally, each diode can safely dissipate 80A (SP1105S) of 8/20μs surge current (IEC 61000-4-5 2nd edition) with very low clamping voltages.
- ESD, IEC 61000-4-2, ±30kV contact, ±30kV air
- EFT, IEC 61000-4-4, 40A (5/50ns)
- Lightning, IEC 61000-4-5 2nd edition, 80A (tP=8/20μs, SP1105S)
- Low clamping voltage
- Low leakage current
- Moisture Sensitivity Level (MSL-1)
- Lead free and RoHS compliant
- AEC-Q101 qualified
SP11xx Parts
Filters
Part Number | Actions | VR (Vstandoff) | ILeak (µA) | ESD Contact (kV) | ESD Air (kV) | Lightning Immunity (8x20µs)(A) | Clamp Voltage | CI/O TYP (pF) | Polarity | Channels | MIN VBR@IT (V) | Package |
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Part Number | Actions | VR (Vstandoff) | ILeak (µA) | ESD Contact (kV) | ESD Air (kV) | Lightning Immunity (8x20µs)(A) | Clamp Voltage | CI/O TYP (pF) | Polarity | Channels | MIN VBR@IT (V) | Package | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|
5 | 1 | ±30 | ±30 | 80 | 9.8V@80A | 630 | Unidirectional | 1 | 6 | uDFN0603 | |||
12 | 1 | ±30 | ±30 | 40 | 26.5V@40A | 230 | Unidirectional | 1 | 13.3 | uDFN0603 | |||
15 | 1 | ±30 | ±30 | 30 | 30V@30A | 180 | Unidirectional | 1 | 16.7 | uDFN0603 | |||
24 | 1 | ±30 | ±30 | 20 | 45V@20A | 130 | Unidirectional | 1 | 26.7 | uDFN0603 |
SP11xx Applications
- Switches / Buttons
- Test Equipment / Instrumentation
- Point-of-Sale Terminals
- Medical Equipment
- Notebooks / Desktops / Servers
- Computer Peripherals
- Automotive Electronics
Series: SP11xx Resources

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