Gen4

IXTN660N04T4

  • Electrical Characteristics
    • Catalog # IXTN660N04T4
    • Drain-Source Voltage (V) 40
    • Maximum On-Resistance @ 25 ℃ (Ohm) 0.00085
    • Continuous Drain Current @ 25 ℃ (A) 660
    • Gate Charge (nC) 860
    • Input Capacitance, CISS (pF) 44000
    • Thermal resistance [junction-case] (K/W) 0.144
    • Configuration Single
    • Package Type SOT-227
    • Typical Reverse Recovery Time (ns) 60
    • Power Dissipation (W) 1040
    • Sample Request Yes
    • Check Stock Yes
    • Partner ECAD Models IXTN660N04T4