SIC MOSFET in SOT227

IXFN55N120SK

  • Electrical Characteristics
    • Catalog # IXFN55N120SK
    • Status Active
    • Drain-Source Voltage (V) 1200
    • Rds(on) max @ 25°C (mΩ) 42
    • ID cont @ 25C 54
    • Thermal resistance [junction-case] (K/W) 0.71
    • TJMax Maximum Operating Junction Temperature 175
    • Sample Request Yes
    • Configuration N-Channel
    • Qualification Industrial
    • UL listed E72873
    • Isolation Voltage 2500