Fast Recovery Epitaxial Diodes (FREDs)

Soft Recovery Capsule Type

  • Electrical Characteristics
    • Catalog # M0225YH300
    • VRRM [Diode] (V) 3000
    • IFAV @ Tk=55 ℃ (A) 225
    • IFSM 10ms Half Sine Wave (A) 2000
    • I2t [Diode] (A2s) 20 x 103
    • trr,typ (µs) 3.00
    • Qrr (µC) 220
    • TJ Max (°C) 150
    • Package Type W3
    • V0 (V) 1.900
    • rS (mOhm) 4.160
    • RthJK 180° Sine Wave (K/W) 0.1000
    • Part Datasheet
    • Catalog # M0225YH360
    • VRRM [Diode] (V) 3600
    • IFAV @ Tk=55 ℃ (A) 225
    • IFSM 10ms Half Sine Wave (A) 2000
    • I2t [Diode] (A2s) 20 x 103
    • trr,typ (µs) 3.00
    • Qrr (µC) 220
    • TJ Max (°C) 150
    • Package Type W3
    • V0 (V) 1.900
    • rS (mOhm) 4.160
    • RthJK 180° Sine Wave (K/W) 0.1000
    • Part Datasheet
    • Catalog # M0225YH450
    • VRRM [Diode] (V) 4500
    • IFAV @ Tk=55 ℃ (A) 225
    • IFSM 10ms Half Sine Wave (A) 2000
    • I2t [Diode] (A2s) 20 x 103
    • trr,typ (µs) 3.00
    • Qrr (µC) 220
    • TJ Max (°C) 150
    • Package Type W3
    • V0 (V) 1.900
    • rS (mOhm) 4.160
    • RthJK 180° Sine Wave (K/W) 0.1000
    • Part Datasheet
    • Catalog # M0310YH300
    • VRRM [Diode] (V) 3000
    • IFAV @ Tk=55 ℃ (A) 310
    • IFSM 10ms Half Sine Wave (A) 4590
    • I2t [Diode] (A2s) 105 x 103
    • trr,typ (µs) 2.80
    • Qrr (µC) 275
    • TJ Max (°C) 150
    • Package Type W3
    • V0 (V) 1.490
    • rS (mOhm) 2.060
    • RthJK 180° Sine Wave (K/W) 0.1000
    • Part Datasheet
    • Catalog # M0310YH350
    • VRRM [Diode] (V) 3500
    • IFAV @ Tk=55 ℃ (A) 310
    • IFSM 10ms Half Sine Wave (A) 4590
    • I2t [Diode] (A2s) 105 x 103
    • trr,typ (µs) 2.80
    • Qrr (µC) 275
    • TJ Max (°C) 150
    • Package Type W3
    • V0 (V) 1.490
    • rS (mOhm) 2.060
    • RthJK 180° Sine Wave (K/W) 0.1000
    • Part Datasheet
    • Catalog # M0347WC160
    • VRRM [Diode] (V) 1600
    • IFAV @ Tk=55 ℃ (A) 347
    • IFSM 10ms Half Sine Wave (A) 4250
    • I2t [Diode] (A2s) 90.3 x 103
    • trr,typ (µs) 2.80
    • Qrr (µC) 210
    • TJ Max (°C) 125
    • Package Type W1
    • V0 (V) 1.210
    • rS (mOhm) 1.200
    • RthJK 180° Sine Wave (K/W) 0.0900
    • Catalog # M0347WC200
    • VRRM [Diode] (V) 2000
    • IFAV @ Tk=55 ℃ (A) 347
    • IFSM 10ms Half Sine Wave (A) 4250
    • I2t [Diode] (A2s) 90.3 x 103
    • trr,typ (µs) 2.80
    • Qrr (µC) 210
    • TJ Max (°C) 125
    • Package Type W1
    • V0 (V) 1.210
    • rS (mOhm) 1.200
    • RthJK 180° Sine Wave (K/W) 0.0900
    • Part Datasheet
    • Catalog # M0347WC250
    • VRRM [Diode] (V) 2500
    • IFAV @ Tk=55 ℃ (A) 347
    • IFSM 10ms Half Sine Wave (A) 4250
    • I2t [Diode] (A2s) 90.3 x 103
    • trr,typ (µs) 2.80
    • Qrr (µC) 210
    • TJ Max (°C) 125
    • Package Type W1
    • V0 (V) 1.210
    • rS (mOhm) 1.200
    • RthJK 180° Sine Wave (K/W) 0.0900
    • Part Datasheet
    • Catalog # M0358WC120
    • VRRM [Diode] (V) 1200
    • IFAV @ Tk=55 ℃ (A) 358
    • IFSM 10ms Half Sine Wave (A) 2450
    • I2t [Diode] (A2s) 30 x 103
    • trr,typ (µs) 1.40
    • Qrr (µC) 125
    • TJ Max (°C) 125
    • Package Type W1
    • V0 (V) 1.460
    • rS (mOhm) 0.800
    • RthJK 180° Sine Wave (K/W) 0.0900
    • Part Datasheet
    • Catalog # M0358WC180
    • VRRM [Diode] (V) 1800
    • IFAV @ Tk=55 ℃ (A) 358
    • IFSM 10ms Half Sine Wave (A) 2450
    • I2t [Diode] (A2s) 30 x 103
    • trr,typ (µs) 1.40
    • Qrr (µC) 125
    • TJ Max (°C) 125
    • Package Type W1
    • V0 (V) 1.460
    • rS (mOhm) 0.800
    • RthJK 180° Sine Wave (K/W) 0.0900
    • Part Datasheet
    • Catalog # M0367WC140
    • VRRM [Diode] (V) 1400
    • IFAV @ Tk=55 ℃ (A) 367
    • IFSM 10ms Half Sine Wave (A) 4500
    • I2t [Diode] (A2s) 101x 103
    • trr,typ (µs) 3.30
    • Qrr (µC) 300
    • TJ Max (°C) 125
    • Package Type W1
    • V0 (V) 1.280
    • rS (mOhm) 0.920
    • RthJK 180° Sine Wave (K/W) 0.0900
    • Part Datasheet
    • Catalog # M0367WC220
    • VRRM [Diode] (V) 2200
    • IFAV @ Tk=55 ℃ (A) 367
    • IFSM 10ms Half Sine Wave (A) 4500
    • I2t [Diode] (A2s) 101 x 103
    • trr,typ (µs) 3.30
    • Qrr (µC) 300
    • TJ Max (°C) 125
    • Package Type W1
    • V0 (V) 1.280
    • rS (mOhm) 0.920
    • RthJK 180° Sine Wave (K/W) 0.0900
    • Part Datasheet
    • Catalog # M0367WC280
    • VRRM [Diode] (V) 2800
    • IFAV @ Tk=55 ℃ (A) 367
    • IFSM 10ms Half Sine Wave (A) 4500
    • I2t [Diode] (A2s) 101 x 103
    • trr,typ (µs) 3.30
    • Qrr (µC) 300
    • TJ Max (°C) 125
    • Package Type W1
    • V0 (V) 1.280
    • rS (mOhm) 0.920
    • RthJK 180° Sine Wave (K/W) 0.0900
    • Part Datasheet
    • Catalog # M0371YH350
    • VRRM [Diode] (V) 3500
    • IFAV @ Tk=55 ℃ (A) 371
    • IFSM 10ms Half Sine Wave (A) 4900
    • I2t [Diode] (A2s) 120 x 103
    • trr,typ (µs) 3.20
    • Qrr (µC) 1260
    • TJ Max (°C) 150
    • Package Type W3
    • V0 (V) 1.050
    • rS (mOhm) 1.650
    • RthJK 180° Sine Wave (K/W) 0.1000
    • Part Datasheet
    • Catalog # M0371YH450
    • VRRM [Diode] (V) 4500
    • IFAV @ Tk=55 ℃ (A) 371
    • IFSM 10ms Half Sine Wave (A) 4900
    • I2t [Diode] (A2s) 120 x 103
    • trr,typ (µs) 3.20
    • Qrr (µC) 1260
    • TJ Max (°C) 150
    • Package Type W3
    • V0 (V) 1.050
    • rS (mOhm) 1.650
    • RthJK 180° Sine Wave (K/W) 0.1000
    • Part Datasheet
    • Catalog # M0433WC120
    • VRRM [Diode] (V) 1200
    • IFAV @ Tk=55 ℃ (A) 433
    • IFSM 10ms Half Sine Wave (A) 4500
    • I2t [Diode] (A2s) 101 x 103
    • trr,typ (µs) 3.50
    • Qrr (µC) 270
    • TJ Max (°C) 125
    • Package Type W1
    • V0 (V) 1.000
    • rS (mOhm) 0.740
    • RthJK 180° Sine Wave (K/W) 0.0900
    • Part Datasheet
    • Catalog # M0433WC160
    • VRRM [Diode] (V) 1600
    • IFAV @ Tk=55 ℃ (A) 433
    • IFSM 10ms Half Sine Wave (A) 4500
    • I2t [Diode] (A2s) 101 x 103
    • trr,typ (µs) 3.50
    • Qrr (µC) 270
    • TJ Max (°C) 125
    • Package Type W1
    • V0 (V) 1.000
    • rS (mOhm) 0.740
    • RthJK 180° Sine Wave (K/W) 0.0900
    • Part Datasheet
    • Catalog # M0433WC200
    • VRRM [Diode] (V) 2000
    • IFAV @ Tk=55 ℃ (A) 433
    • IFSM 10ms Half Sine Wave (A) 4500
    • I2t [Diode] (A2s) 101 x 103
    • trr,typ (µs) 3.50
    • Qrr (µC) 270
    • TJ Max (°C) 125
    • Package Type W1
    • V0 (V) 1.000
    • rS (mOhm) 0.740
    • RthJK 180° Sine Wave (K/W) 0.0900
    • Part Datasheet
    • Catalog # M0437WC080
    • VRRM [Diode] (V) 800
    • IFAV @ Tk=55 ℃ (A) 437
    • IFSM 10ms Half Sine Wave (A) 4500
    • I2t [Diode] (A2s) 101 x 103
    • trr,typ (µs) 3.00
    • Qrr (µC) 75
    • TJ Max (°C) 125
    • Package Type W1
    • V0 (V) 1.020
    • rS (mOhm) 0.700
    • RthJK 180° Sine Wave (K/W) 0.0900
    • Part Datasheet
    • Catalog # M0437WC140
    • VRRM [Diode] (V) 1400
    • IFAV @ Tk=55 ℃ (A) 437
    • IFSM 10ms Half Sine Wave (A) 4500
    • I2t [Diode] (A2s) 101 x 103
    • trr,typ (µs) 3.00
    • Qrr (µC) 75
    • TJ Max (°C) 125
    • Package Type W1
    • V0 (V) 1.020
    • rS (mOhm) 0.700
    • RthJK 180° Sine Wave (K/W) 0.0900
    • Part Datasheet
    • Catalog # M0451YC120
    • VRRM [Diode] (V) 1200
    • IFAV @ Tk=55 ℃ (A) 451
    • IFSM 10ms Half Sine Wave (A) 4500
    • I2t [Diode] (A2s) 101 x 103
    • trr,typ (µs) 2.80
    • Qrr (µC) 120
    • TJ Max (°C) 125
    • Package Type W2
    • V0 (V) 1.000
    • rS (mOhm) 0.740
    • RthJK 180° Sine Wave (K/W) 0.0850
    • Catalog # M0451YC160
    • VRRM [Diode] (V) 1600
    • IFAV @ Tk=55 ℃ (A) 451
    • IFSM 10ms Half Sine Wave (A) 4500
    • I2t [Diode] (A2s) 101 x 103
    • trr,typ (µs) 2.80
    • Qrr (µC) 120
    • TJ Max (°C) 125
    • Package Type W2
    • V0 (V) 1.000
    • rS (mOhm) 0.740
    • RthJK 180° Sine Wave (K/W) 0.0850
    • Part Datasheet
    • Catalog # M0451YC200
    • VRRM [Diode] (V) 2000
    • IFAV @ Tk=55 ℃ (A) 451
    • IFSM 10ms Half Sine Wave (A) 4500
    • I2t [Diode] (A2s) 101 x 103
    • trr,typ (µs) 2.80
    • Qrr (µC) 120
    • TJ Max (°C) 125
    • Package Type W2
    • V0 (V) 1.000
    • rS (mOhm) 0.740
    • RthJK 180° Sine Wave (K/W) 0.0850
    • Part Datasheet
    • Catalog # M0659LC400
    • VRRM [Diode] (V) 4000
    • IFAV @ Tk=55 ℃ (A) 659
    • IFSM 10ms Half Sine Wave (A) 7620
    • I2t [Diode] (A2s) 290 x 103
    • trr,typ (µs) 4.20
    • Qrr (µC) 800
    • TJ Max (°C) 125
    • Package Type W4
    • V0 (V) 1.710
    • rS (mOhm) 0.925
    • RthJK 180° Sine Wave (K/W) 0.0330
    • Part Datasheet
    • Catalog # M0659LC450
    • VRRM [Diode] (V) 4500
    • IFAV @ Tk=55 ℃ (A) 659
    • IFSM 10ms Half Sine Wave (A) 7620
    • I2t [Diode] (A2s) 290 x 103
    • trr,typ (µs) 4.20
    • Qrr (µC) 800
    • TJ Max (°C) 125
    • Package Type W4
    • V0 (V) 1.710
    • rS (mOhm) 0.925
    • RthJK 180° Sine Wave (K/W) 0.0330
    • Part Datasheet
    • Catalog # M0710LC560
    • VRRM [Diode] (V) 5600
    • IFAV @ Tk=55 ℃ (A) 710
    • IFSM 10ms Half Sine Wave (A) 8400
    • I2t [Diode] (A2s) 353 x 103
    • trr,typ (µs) 4.00
    • Qrr (µC) 2100
    • TJ Max (°C) 125
    • Package Type W4
    • V0 (V) 1.450
    • rS (mOhm) 0.875
    • RthJK 180° Sine Wave (K/W) 0.0330
    • Part Datasheet
    • Catalog # M0710LC600
    • VRRM [Diode] (V) 6000
    • IFAV @ Tk=55 ℃ (A) 710
    • IFSM 10ms Half Sine Wave (A) 8400
    • I2t [Diode] (A2s) 353 x 103
    • trr,typ (µs) 4.00
    • Qrr (µC) 2100
    • TJ Max (°C) 125
    • Package Type W4
    • V0 (V) 1.450
    • rS (mOhm) 0.875
    • RthJK 180° Sine Wave (K/W) 0.0330
    • Part Datasheet
    • Catalog # M0736LC400
    • VRRM [Diode] (V) 4000
    • IFAV @ Tk=55 ℃ (A) 736
    • IFSM 10ms Half Sine Wave (A) 9000
    • I2t [Diode] (A2s) 405 x 103
    • trr,typ (µs) 5.20
    • Qrr (µC) 1250
    • TJ Max (°C) 125
    • Package Type W4
    • V0 (V) 1.606
    • rS (mOhm) 0.700
    • RthJK 180° Sine Wave (K/W) 0.0330
    • Part Datasheet
    • Catalog # M0736LC450
    • VRRM [Diode] (V) 4500
    • IFAV @ Tk=55 ℃ (A) 736
    • IFSM 10ms Half Sine Wave (A) 9000
    • I2t [Diode] (A2s) 405 x 103
    • trr,typ (µs) 5.20
    • Qrr (µC) 1250
    • TJ Max (°C) 125
    • Package Type W4
    • V0 (V) 1.606
    • rS (mOhm) 0.700
    • RthJK 180° Sine Wave (K/W) 0.0330
    • Part Datasheet
    • Catalog # M0759YC120
    • VRRM [Diode] (V) 1200
    • IFAV @ Tk=55 ℃ (A) 759
    • IFSM 10ms Half Sine Wave (A) 9500
    • I2t [Diode] (A2s) 450 x 103
    • trr,typ (µs) 2.00
    • Qrr (µC) 80
    • TJ Max (°C) 125
    • Package Type W2
    • V0 (V) 1.130
    • rS (mOhm) 0.380
    • RthJK 180° Sine Wave (K/W) 0.0500
    • Part Datasheet
    • Catalog # M0759YC160
    • VRRM [Diode] (V) 1600
    • IFAV @ Tk=55 ℃ (A) 759
    • IFSM 10ms Half Sine Wave (A) 9500
    • I2t [Diode] (A2s) 450 x 103
    • trr,typ (µs) 2.00
    • Qrr (µC) 80
    • TJ Max (°C) 125
    • Package Type W2
    • V0 (V) 1.130
    • rS (mOhm) 0.380
    • RthJK 180° Sine Wave (K/W) 0.0500
    • Part Datasheet
    • Catalog # M0759YH120
    • VRRM [Diode] (V) 1200
    • IFAV @ Tk=55 ℃ (A) 759
    • IFSM 10ms Half Sine Wave (A) 9500
    • I2t [Diode] (A2s) 450 x 103
    • trr,typ (µs) 2.00
    • Qrr (µC) 80
    • TJ Max (°C) 125
    • Package Type W3
    • V0 (V) 1.130
    • rS (mOhm) 0.380
    • RthJK 180° Sine Wave (K/W) 0.0500
    • Part Datasheet
    • Catalog # M0759YH160
    • VRRM [Diode] (V) 1600
    • IFAV @ Tk=55 ℃ (A) 759
    • IFSM 10ms Half Sine Wave (A) 9500
    • I2t [Diode] (A2s) 450 x 103
    • trr,typ (µs) 2.00
    • Qrr (µC) 80
    • TJ Max (°C) 125
    • Package Type W3
    • V0 (V) 1.130
    • rS (mOhm) 0.380
    • RthJK 180° Sine Wave (K/W) 0.0500
    • Part Datasheet
    • Catalog # M0859LC140
    • VRRM [Diode] (V) 1400
    • IFAV @ Tk=55 ℃ (A) 859
    • IFSM 10ms Half Sine Wave (A) 10000
    • I2t [Diode] (A2s) 500 x 103
    • trr,typ (µs) 3.00
    • Qrr (µC) 280
    • TJ Max (°C) 125
    • Package Type W4
    • V0 (V) 1.170
    • rS (mOhm) 0.320
    • RthJK 180° Sine Wave (K/W) 0.0440
    • Part Datasheet
    • Catalog # M0859LC160
    • VRRM [Diode] (V) 1600
    • IFAV @ Tk=55 ℃ (A) 859
    • IFSM 10ms Half Sine Wave (A) 10000
    • I2t [Diode] (A2s) 500 x 103
    • trr,typ (µs) 3.00
    • Qrr (µC) 280
    • TJ Max (°C) 125
    • Package Type W4
    • V0 (V) 1.170
    • rS (mOhm) 0.320
    • RthJK 180° Sine Wave (K/W) 0.0440
    • Part Datasheet
    • Catalog # M0859LC180
    • VRRM [Diode] (V) 1800
    • IFAV @ Tk=55 ℃ (A) 859
    • IFSM 10ms Half Sine Wave (A) 10000
    • I2t [Diode] (A2s) 500 x 103
    • trr,typ (µs) 3.00
    • Qrr (µC) 280
    • TJ Max (°C) 125
    • Package Type W4
    • V0 (V) 1.170
    • rS (mOhm) 0.320
    • RthJK 180° Sine Wave (K/W) 0.0440
    • Part Datasheet
    • Catalog # M0863LC260
    • VRRM [Diode] (V) 2600
    • IFAV @ Tk=55 ℃ (A) 863
    • IFSM 10ms Half Sine Wave (A) 10000
    • I2t [Diode] (A2s) 500 x 103
    • trr,typ (µs) 4.80
    • Qrr (µC) 950
    • TJ Max (°C) 125
    • Package Type W4
    • V0 (V) 1.308
    • rS (mOhm) 0.538
    • RthJK 180° Sine Wave (K/W) 0.0330
    • Part Datasheet
    • Catalog # M0863LC300
    • VRRM [Diode] (V) 3000
    • IFAV @ Tk=55 ℃ (A) 863
    • IFSM 10ms Half Sine Wave (A) 10000
    • I2t [Diode] (A2s) 500 x 103
    • trr,typ (µs) 4.80
    • Qrr (µC) 950
    • TJ Max (°C) 125
    • Package Type W4
    • V0 (V) 1.308
    • rS (mOhm) 0.538
    • RthJK 180° Sine Wave (K/W) 0.0330
    • Part Datasheet
    • Catalog # M0863LC360
    • VRRM [Diode] (V) 3600
    • IFAV @ Tk=55 ℃ (A) 863
    • IFSM 10ms Half Sine Wave (A) 10000
    • I2t [Diode] (A2s) 500 x 103
    • trr,typ (µs) 4.80
    • Qrr (µC) 950
    • TJ Max (°C) 125
    • Package Type W4
    • V0 (V) 1.308
    • rS (mOhm) 0.538
    • RthJK 180° Sine Wave (K/W) 0.0330
    • Part Datasheet
    • Catalog # M0872LC140
    • VRRM [Diode] (V) 1400
    • IFAV @ Tk=55 ℃ (A) 872
    • IFSM 10ms Half Sine Wave (A) 10000
    • I2t [Diode] (A2s) 500 x 103
    • trr,typ (µs) 4.00
    • Qrr (µC) 700
    • TJ Max (°C) 125
    • Package Type W4
    • V0 (V) 1.090
    • rS (mOhm) 0.340
    • RthJK 180° Sine Wave (K/W) 0.0440
    • Part Datasheet
    • Catalog # M0872LC180
    • VRRM [Diode] (V) 1800
    • IFAV @ Tk=55 ℃ (A) 872
    • IFSM 10ms Half Sine Wave (A) 10000
    • I2t [Diode] (A2s) 500 x 103
    • trr,typ (µs) 4.00
    • Qrr (µC) 700
    • TJ Max (°C) 125
    • Package Type W4
    • V0 (V) 1.090
    • rS (mOhm) 0.340
    • RthJK 180° Sine Wave (K/W) 0.0440
    • Part Datasheet
    • Catalog # M0872LC210
    • VRRM [Diode] (V) 2100
    • IFAV @ Tk=55 ℃ (A) 872
    • IFSM 10ms Half Sine Wave (A) 10000
    • I2t [Diode] (A2s) 500 x 103
    • trr,typ (µs) 4.00
    • Qrr (µC) 700
    • TJ Max (°C) 125
    • Package Type W4
    • V0 (V) 1.090
    • rS (mOhm) 0.340
    • RthJK 180° Sine Wave (K/W) 0.0440
    • Part Datasheet
    • Catalog # M0955JK200
    • VRRM [Diode] (V) 2000
    • IFAV @ Tk=55 ℃ (A) 1105
    • IFSM 10ms Half Sine Wave (A) 11700
    • I2t [Diode] (A2s) 684 x 103
    • trr,typ (µs) 3.40
    • Qrr (µC) 500
    • TJ Max (°C) 125
    • Package Type W113
    • V0 (V) 1.440
    • rS (mOhm) 0.330
    • RthJK 180° Sine Wave (K/W) 0.0270
    • Catalog # M0955JK250
    • VRRM [Diode] (V) 2500
    • IFAV @ Tk=55 ℃ (A) 1105
    • IFSM 10ms Half Sine Wave (A) 11700
    • I2t [Diode] (A2s) 684 x 103
    • trr,typ (µs) 3.40
    • Qrr (µC) 500
    • TJ Max (°C) 125
    • Package Type W113
    • V0 (V) 1.440
    • rS (mOhm) 0.330
    • RthJK 180° Sine Wave (K/W) 0.0270
    • Catalog # M0955LC200
    • VRRM [Diode] (V) 2000
    • IFAV @ Tk=55 ℃ (A) 955
    • IFSM 10ms Half Sine Wave (A) 11700
    • I2t [Diode] (A2s) 684 x 103
    • trr,typ (µs) 3.40
    • Qrr (µC) 500
    • TJ Max (°C) 125
    • Package Type W4
    • V0 (V) 1.440
    • rS (mOhm) 0.330
    • RthJK 180° Sine Wave (K/W) 0.0330
    • Part Datasheet
    • Catalog # M0955LC250
    • VRRM [Diode] (V) 2500
    • IFAV @ Tk=55 ℃ (A) 955
    • IFSM 10ms Half Sine Wave (A) 11700
    • I2t [Diode] (A2s) 684 x 103
    • trr,typ (µs) 3.40
    • Qrr (µC) 500
    • TJ Max (°C) 125
    • Package Type W4
    • V0 (V) 1.440
    • rS (mOhm) 0.330
    • RthJK 180° Sine Wave (K/W) 0.0330
    • Part Datasheet
    • Catalog # M1080LC100
    • VRRM [Diode] (V) 1000
    • IFAV @ Tk=55 ℃ (A) 1080
    • IFSM 10ms Half Sine Wave (A) 13500
    • I2t [Diode] (A2s) 910 x 103
    • trr,typ (µs) 1.90
    • Qrr (µC) 85
    • TJ Max (°C) 125
    • Package Type W4
    • V0 (V) 1.125
    • rS (mOhm) 0.314
    • RthJK 180° Sine Wave (K/W) 0.0330
    • Part Datasheet
    • Catalog # M1080LC120
    • VRRM [Diode] (V) 1200
    • IFAV @ Tk=55 ℃ (A) 1080
    • IFSM 10ms Half Sine Wave (A) 13500
    • I2t [Diode] (A2s) 910 x 103
    • trr,typ (µs) 1.90
    • Qrr (µC) 85
    • TJ Max (°C) 125
    • Package Type W4
    • V0 (V) 1.125
    • rS (mOhm) 0.314
    • RthJK 180° Sine Wave (K/W) 0.0330
    • Part Datasheet
    • Catalog # M1102NC500
    • VRRM [Diode] (V) 5000
    • IFAV @ Tk=55 ℃ (A) 1102
    • IFSM 10ms Half Sine Wave (A) 13000
    • I2t [Diode] (A2s) 845 x 103
    • trr,typ (µs) 5.50
    • Qrr (µC) 3300
    • TJ Max (°C) 125
    • Package Type W5
    • V0 (V) 1.360
    • rS (mOhm) 0.557
    • RthJK 180° Sine Wave (K/W) 0.0220
    • Part Datasheet
    • Catalog # M1102NC600
    • VRRM [Diode] (V) 6000
    • IFAV @ Tk=55 ℃ (A) 1102
    • IFSM 10ms Half Sine Wave (A) 13000
    • I2t [Diode] (A2s) 845 x 103
    • trr,typ (µs) 5.50
    • Qrr (µC) 3300
    • TJ Max (°C) 125
    • Package Type W5
    • V0 (V) 1.360
    • rS (mOhm) 0.557
    • RthJK 180° Sine Wave (K/W) 0.0220
    • Part Datasheet
    • Catalog # M1102ND500
    • VRRM [Diode] (V) 5000
    • IFAV @ Tk=55 ℃ (A) 1102
    • IFSM 10ms Half Sine Wave (A) 13000
    • I2t [Diode] (A2s) 845 x 103
    • trr,typ (µs) 5.50
    • Qrr (µC) 3300
    • TJ Max (°C) 125
    • Package Type W37
    • V0 (V) 1.360
    • rS (mOhm) 0.557
    • RthJK 180° Sine Wave (K/W) 0.0220
    • Catalog # M1102ND600
    • VRRM [Diode] (V) 6000
    • IFAV @ Tk=55 ℃ (A) 1102
    • IFSM 10ms Half Sine Wave (A) 13000
    • I2t [Diode] (A2s) 845 x 103
    • trr,typ (µs) 5.50
    • Qrr (µC) 3300
    • TJ Max (°C) 125
    • Package Type W37
    • V0 (V) 1.360
    • rS (mOhm) 0.557
    • RthJK 180° Sine Wave (K/W) 0.0220
    • Catalog # M1104NC400
    • VRRM [Diode] (V) 4000
    • IFAV @ Tk=55 ℃ (A) 1104
    • IFSM 10ms Half Sine Wave (A) 13000
    • I2t [Diode] (A2s) 845 x 103
    • trr,typ (µs) 6.00
    • Qrr (µC) 2100
    • TJ Max (°C) 125
    • Package Type W5
    • V0 (V) 1.370
    • rS (mOhm) 0.553
    • RthJK 180° Sine Wave (K/W) 0.0220
    • Part Datasheet
    • Catalog # M1104NC450
    • VRRM [Diode] (V) 4500
    • IFAV @ Tk=55 ℃ (A) 1104
    • IFSM 10ms Half Sine Wave (A) 13000
    • I2t [Diode] (A2s) 845 x 103
    • trr,typ (µs) 6.00
    • Qrr (µC) 2100
    • TJ Max (°C) 125
    • Package Type W5
    • V0 (V) 1.370
    • rS (mOhm) 0.553
    • RthJK 180° Sine Wave (K/W) 0.0220
    • Part Datasheet
    • Catalog # M1104ND400
    • VRRM [Diode] (V) 4000
    • IFAV @ Tk=55 ℃ (A) 1104
    • IFSM 10ms Half Sine Wave (A) 13000
    • I2t [Diode] (A2s) 845 x 103
    • trr,typ (µs) 6.00
    • Qrr (µC) 2100
    • TJ Max (°C) 125
    • Package Type W37
    • V0 (V) 1.370
    • rS (mOhm) 0.553
    • RthJK 180° Sine Wave (K/W) 0.0220
    • Catalog # M1104ND450
    • VRRM [Diode] (V) 4500
    • IFAV @ Tk=55 ℃ (A) 1104
    • IFSM 10ms Half Sine Wave (A) 13000
    • I2t [Diode] (A2s) 845 x 103
    • trr,typ (µs) 6.00
    • Qrr (µC) 2100
    • TJ Max (°C) 125
    • Package Type W37
    • V0 (V) 1.370
    • rS (mOhm) 0.553
    • RthJK 180° Sine Wave (K/W) 0.0220
    • Catalog # M1242NC260
    • VRRM [Diode] (V) 2600
    • IFAV @ Tk=55 ℃ (A) 1242
    • IFSM 10ms Half Sine Wave (A) 16400
    • I2t [Diode] (A2s) 1.34 x 106
    • trr,typ (µs) 6.00
    • Qrr (µC) 1500
    • TJ Max (°C) 125
    • Package Type W5
    • V0 (V) 1.270
    • rS (mOhm) 0.420
    • RthJK 180° Sine Wave (K/W) 0.0220
    • Part Datasheet
    • Catalog # M1242NC360
    • VRRM [Diode] (V) 3600
    • IFAV @ Tk=55 ℃ (A) 1242
    • IFSM 10ms Half Sine Wave (A) 16400
    • I2t [Diode] (A2s) 1.34 x 106
    • trr,typ (µs) 6.00
    • Qrr (µC) 1500
    • TJ Max (°C) 125
    • Package Type W5
    • V0 (V) 1.270
    • rS (mOhm) 0.420
    • RthJK 180° Sine Wave (K/W) 0.0220
    • Part Datasheet
    • Catalog # M1242ND260
    • VRRM [Diode] (V) 2600
    • IFAV @ Tk=55 ℃ (A) 1242
    • IFSM 10ms Half Sine Wave (A) 16400
    • I2t [Diode] (A2s) 1.34 x 106
    • trr,typ (µs) 6.00
    • Qrr (µC) 1500
    • TJ Max (°C) 125
    • Package Type W37
    • V0 (V) 1.270
    • rS (mOhm) 0.420
    • RthJK 180° Sine Wave (K/W) 0.0220
    • Part Datasheet
    • Catalog # M1242ND360
    • VRRM [Diode] (V) 3600
    • IFAV @ Tk=55 ℃ (A) 1242
    • IFSM 10ms Half Sine Wave (A) 16400
    • I2t [Diode] (A2s) 1.34 x 106
    • trr,typ (µs) 6.00
    • Qrr (µC) 1500
    • TJ Max (°C) 125
    • Package Type W37
    • V0 (V) 1.270
    • rS (mOhm) 0.420
    • RthJK 180° Sine Wave (K/W) 0.0220
    • Part Datasheet
    • Catalog # M1494NC160
    • VRRM [Diode] (V) 1600
    • IFAV @ Tk=55 ℃ (A) 1494
    • IFSM 10ms Half Sine Wave (A) 19600
    • I2t [Diode] (A2s) 1.92 x 106
    • trr,typ (µs) 3.90
    • Qrr (µC) 815
    • TJ Max (°C) 125
    • Package Type W5
    • V0 (V) 1.150
    • rS (mOhm) 0.265
    • RthJK 180° Sine Wave (K/W) 0.0220
    • Catalog # M1494NC250
    • VRRM [Diode] (V) 2500
    • IFAV @ Tk=55 ℃ (A) 1494
    • IFSM 10ms Half Sine Wave (A) 19600
    • I2t [Diode] (A2s) 1.92 x 106
    • trr,typ (µs) 3.90
    • Qrr (µC) 815
    • TJ Max (°C) 125
    • Package Type W5
    • V0 (V) 1.150
    • rS (mOhm) 0.265
    • RthJK 180° Sine Wave (K/W) 0.0220
    • Part Datasheet
    • Catalog # M1494ND160
    • VRRM [Diode] (V) 1600
    • IFAV @ Tk=55 ℃ (A) 1494
    • IFSM 10ms Half Sine Wave (A) 19600
    • I2t [Diode] (A2s) 1.92 x 106
    • trr,typ (µs) 3.90
    • Qrr (µC) 815
    • TJ Max (°C) 125
    • Package Type W37
    • V0 (V) 1.150
    • rS (mOhm) 0.265
    • RthJK 180° Sine Wave (K/W) 0.0220
    • Catalog # M1494ND250
    • VRRM [Diode] (V) 2500
    • IFAV @ Tk=55 ℃ (A) 1494
    • IFSM 10ms Half Sine Wave (A) 19600
    • I2t [Diode] (A2s) 1.92 x 106
    • trr,typ (µs) 3.90
    • Qrr (µC) 815
    • TJ Max (°C) 125
    • Package Type W37
    • V0 (V) 1.150
    • rS (mOhm) 0.265
    • RthJK 180° Sine Wave (K/W) 0.0220
    • Catalog # M1494NK160
    • VRRM [Diode] (V) 1600
    • IFAV @ Tk=55 ℃ (A) 1975
    • IFSM 10ms Half Sine Wave (A) 19600
    • I2t [Diode] (A2s) 1.92 x 106
    • trr,typ (µs) 3.90
    • Qrr (µC) 815
    • TJ Max (°C) 125
    • Package Type WD8
    • V0 (V) 1.150
    • rS (mOhm) 0.265
    • RthJK 180° Sine Wave (K/W) 0.0145
    • Catalog # M1494NK250
    • VRRM [Diode] (V) 2500
    • IFAV @ Tk=55 ℃ (A) 1975
    • IFSM 10ms Half Sine Wave (A) 19600
    • I2t [Diode] (A2s) 1.92 x 106
    • trr,typ (µs) 3.90
    • Qrr (µC) 815
    • TJ Max (°C) 125
    • Package Type WD8
    • V0 (V) 1.150
    • rS (mOhm) 0.265
    • RthJK 180° Sine Wave (K/W) 0.0145
    • Catalog # M1565VC400
    • VRRM [Diode] (V) 4000
    • IFAV @ Tk=55 ℃ (A) 1565
    • IFSM 10ms Half Sine Wave (A) 19700
    • I2t [Diode] (A2s) 1.94 x 106
    • trr,typ (µs) 5.00
    • Qrr (µC) 4000
    • TJ Max (°C) 125
    • Package Type W6
    • V0 (V) 1.090
    • rS (mOhm) 0.360
    • RthJK 180° Sine Wave (K/W) 0.0180
    • Part Datasheet
    • Catalog # M1565VC450
    • VRRM [Diode] (V) 4500
    • IFAV @ Tk=55 ℃ (A) 1565
    • IFSM 10ms Half Sine Wave (A) 19700
    • I2t [Diode] (A2s) 1.94 x 106
    • trr,typ (µs) 5.00
    • Qrr (µC) 4000
    • TJ Max (°C) 125
    • Package Type W6
    • V0 (V) 1.090
    • rS (mOhm) 0.360
    • RthJK 180° Sine Wave (K/W) 0.0180
    • Part Datasheet
    • Catalog # M1565VF400
    • VRRM [Diode] (V) 4000
    • IFAV @ Tk=55 ℃ (A) 1565
    • IFSM 10ms Half Sine Wave (A) 19700
    • I2t [Diode] (A2s) 1.94 x 106
    • trr,typ (µs) 5.00
    • Qrr (µC) 4000
    • TJ Max (°C) 125
    • Package Type W43
    • V0 (V) 1.090
    • rS (mOhm) 0.360
    • RthJK 180° Sine Wave (K/W) 0.0180
    • Part Datasheet
    • Catalog # M1565VF450
    • VRRM [Diode] (V) 4500
    • IFAV @ Tk=55 ℃ (A) 1565
    • IFSM 10ms Half Sine Wave (A) 19700
    • I2t [Diode] (A2s) 1.94 x 106
    • trr,typ (µs) 5.00
    • Qrr (µC) 4000
    • TJ Max (°C) 125
    • Package Type W43
    • V0 (V) 1.090
    • rS (mOhm) 0.360
    • RthJK 180° Sine Wave (K/W) 0.0180
    • Part Datasheet
    • Catalog # M1858NC120
    • VRRM [Diode] (V) 1200
    • IFAV @ Tk=55 ℃ (A) 1858
    • IFSM 10ms Half Sine Wave (A) 25000
    • I2t [Diode] (A2s) 3.25 x 106
    • trr,typ (µs) 2.50
    • Qrr (µC) 120
    • TJ Max (°C) 125
    • Package Type W5
    • V0 (V) 1.127
    • rS (mOhm) 0.127
    • RthJK 180° Sine Wave (K/W) 0.0220
    • Part Datasheet
    • Catalog # M1858NC160
    • VRRM [Diode] (V) 1600
    • IFAV @ Tk=55 ℃ (A) 1858
    • IFSM 10ms Half Sine Wave (A) 25000
    • I2t [Diode] (A2s) 3.25 x 106
    • trr,typ (µs) 2.50
    • Qrr (µC) 120
    • TJ Max (°C) 125
    • Package Type W5
    • V0 (V) 1.127
    • rS (mOhm) 0.127
    • RthJK 180° Sine Wave (K/W) 0.0220
    • Part Datasheet
    • Catalog # M1858ND120
    • VRRM [Diode] (V) 1200
    • IFAV @ Tk=55 ℃ (A) 1858
    • IFSM 10ms Half Sine Wave (A) 25000
    • I2t [Diode] (A2s) 3.25 x 106
    • trr,typ (µs) 2.50
    • Qrr (µC) 120
    • TJ Max (°C) 125
    • Package Type W37
    • V0 (V) 1.127
    • rS (mOhm) 0.127
    • RthJK 180° Sine Wave (K/W) 0.0220
    • Catalog # M1858ND160
    • VRRM [Diode] (V) 1600
    • IFAV @ Tk=55 ℃ (A) 1858
    • IFSM 10ms Half Sine Wave (A) 25000
    • I2t [Diode] (A2s) 3.25 x 106
    • trr,typ (µs) 2.50
    • Qrr (µC) 120
    • TJ Max (°C) 125
    • Package Type W37
    • V0 (V) 1.127
    • rS (mOhm) 0.127
    • RthJK 180° Sine Wave (K/W) 0.0220
    • Catalog # M2322ZC300
    • VRRM [Diode] (V) 3000
    • IFAV @ Tk=55 ℃ (A) 2322
    • IFSM 10ms Half Sine Wave (A) 23000
    • I2t [Diode] (A2s) 2.64 x 106
    • trr,typ (µs) 6.50
    • Qrr (µC) 3200
    • TJ Max (°C) 125
    • Package Type W7
    • V0 (V) 1.670
    • rS (mOhm) 0.186
    • RthJK 180° Sine Wave (K/W) 0.0110
    • Part Datasheet
    • Catalog # M2322ZC400
    • VRRM [Diode] (V) 4000
    • IFAV @ Tk=55 ℃ (A) 2322
    • IFSM 10ms Half Sine Wave (A) 23000
    • I2t [Diode] (A2s) 2.64 x 106
    • trr,typ (µs) 6.50
    • Qrr (µC) 3200
    • TJ Max (°C) 125
    • Package Type W7
    • V0 (V) 1.670
    • rS (mOhm) 0.186
    • RthJK 180° Sine Wave (K/W) 0.0110
    • Part Datasheet
    • Catalog # M2322ZD300
    • VRRM [Diode] (V) 3000
    • IFAV @ Tk=55 ℃ (A) 2322
    • IFSM 10ms Half Sine Wave (A) 23000
    • I2t [Diode] (A2s) 2.64 x 106
    • trr,typ (µs) 6.50
    • Qrr (µC) 3200
    • TJ Max (°C) 125
    • Package Type W42
    • V0 (V) 1.670
    • rS (mOhm) 0.186
    • RthJK 180° Sine Wave (K/W) 0.0110
    • Part Datasheet
    • Catalog # M2322ZD400
    • VRRM [Diode] (V) 4000
    • IFAV @ Tk=55 ℃ (A) 2322
    • IFSM 10ms Half Sine Wave (A) 23000
    • I2t [Diode] (A2s) 2.64 x 106
    • trr,typ (µs) 6.50
    • Qrr (µC) 3200
    • TJ Max (°C) 125
    • Package Type W42
    • V0 (V) 1.670
    • rS (mOhm) 0.186
    • RthJK 180° Sine Wave (K/W) 0.0110
    • Part Datasheet
    • Catalog # M2413VC200
    • VRRM [Diode] (V) 2000
    • IFAV @ Tk=55 ℃ (A) 2413
    • IFSM 10ms Half Sine Wave (A) 32000
    • I2t [Diode] (A2s) 5.12 x 106
    • trr,typ (µs) 5.00
    • Qrr (µC) 2500
    • TJ Max (°C) 125
    • Package Type W6
    • V0 (V) 1.090
    • rS (mOhm) 0.121
    • RthJK 180° Sine Wave (K/W) 0.0160
    • Part Datasheet
    • Catalog # M2413VC250
    • VRRM [Diode] (V) 2500
    • IFAV @ Tk=55 ℃ (A) 2413
    • IFSM 10ms Half Sine Wave (A) 32000
    • I2t [Diode] (A2s) 5.12 x 106
    • trr,typ (µs) 5.00
    • Qrr (µC) 2500
    • TJ Max (°C) 125
    • Package Type W6
    • V0 (V) 1.090
    • rS (mOhm) 0.121
    • RthJK 180° Sine Wave (K/W) 0.0160
    • Part Datasheet
    • Catalog # M2413VF200
    • VRRM [Diode] (V) 2000
    • IFAV @ Tk=55 ℃ (A) 2413
    • IFSM 10ms Half Sine Wave (A) 32000
    • I2t [Diode] (A2s) 5.12 x 106
    • trr,typ (µs) 5.00
    • Qrr (µC) 2500
    • TJ Max (°C) 125
    • Package Type W43
    • V0 (V) 1.090
    • rS (mOhm) 0.121
    • RthJK 180° Sine Wave (K/W) 0.0160
    • Part Datasheet
    • Catalog # M2413VF250
    • VRRM [Diode] (V) 2500
    • IFAV @ Tk=55 ℃ (A) 2413
    • IFSM 10ms Half Sine Wave (A) 32000
    • I2t [Diode] (A2s) 5.12 x 106
    • trr,typ (µs) 5.00
    • Qrr (µC) 2500
    • TJ Max (°C) 125
    • Package Type W43
    • V0 (V) 1.090
    • rS (mOhm) 0.121
    • RthJK 180° Sine Wave (K/W) 0.0160
    • Part Datasheet
    • Catalog # M3560TJ420
    • VRRM [Diode] (V) 4200
    • IFAV @ Tk=55 ℃ (A) 3560
    • IFSM 10ms Half Sine Wave (A) 36000
    • I2t [Diode] (A2s) 6.48 x 106
    • trr,typ (µs) 7.00
    • Qrr (µC) 4100
    • TJ Max (°C) 125
    • Package Type W89
    • V0 (V) 1.253
    • rS (mOhm) 0.137
    • RthJK 180° Sine Wave (K/W) 0.0080
    • Part Datasheet
    • Catalog # M3560TJ450
    • VRRM [Diode] (V) 4500
    • IFAV @ Tk=55 ℃ (A) 3560
    • IFSM 10ms Half Sine Wave (A) 36000
    • I2t [Diode] (A2s) 6.48 x 106
    • trr,typ (µs) 7.00
    • Qrr (µC) 4100
    • TJ Max (°C) 125
    • Package Type W89
    • V0 (V) 1.253
    • rS (mOhm) 0.137
    • RthJK 180° Sine Wave (K/W) 0.0080
    • Part Datasheet
    • Catalog # M4305TJ240
    • VRRM [Diode] (V) 2400
    • IFAV @ Tk=55 ℃ (A) 4305
    • IFSM 10ms Half Sine Wave (A) 49000
    • I2t [Diode] (A2s) 12.0 x 106
    • trr,typ (µs) 5.00
    • Qrr (µC) 2500
    • TJ Max (°C) 125
    • Package Type W89
    • V0 (V) 1.104
    • rS (mOhm) 0.087
    • RthJK 180° Sine Wave (K/W) 0.0080
    • Part Datasheet
    • Catalog # M4305TJ280
    • VRRM [Diode] (V) 2800
    • IFAV @ Tk=55 ℃ (A) 4305
    • IFSM 10ms Half Sine Wave (A) 49000
    • I2t [Diode] (A2s) 12.0 x 106
    • trr,typ (µs) 5.00
    • Qrr (µC) 2500
    • TJ Max (°C) 125
    • Package Type W89
    • V0 (V) 1.104
    • rS (mOhm) 0.087
    • RthJK 180° Sine Wave (K/W) 0.0080
    • Part Datasheet